All-inkjet-printed high-performance flexible MoS2 and MoS2-reduced graphene oxide field-effect transistors; Journal of Materials Science; Vol. 55, iss. 27
| Parent link: | Journal of Materials Science Vol. 55, iss. 27.— 2020.— [P. 12969-12979] |
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| Corporate Authors: | , |
| מחברים אחרים: | , , , , , , , , , |
| סיכום: | Title screen Two-dimensional (2D) materials have been utilized to design flexible field-effect transistors (FETs) with promising performance. However, flexible FETs still face challenges with poor switching features and ultra-low drive current. In this paper, a facile and repeatable large-area integration process is presented for inkjet-printed FETs with 2D materials active channels and PI films as gate dielectrics. The MoS2 FETs reported here exhibit n-type channel feature with an outstanding average subthreshold swing of 75 mV/dec, an on-state/off-state current ratio of 104, and on-state current up to 10 ?A at a power supply voltage of 3.0 V. Besides, MoS2–rGO FETs also exhibit n-type semiconductor features with good electrical properties by the inkjet-printing technology. Режим доступа: по договору с организацией-держателем ресурса |
| שפה: | אנגלית |
| יצא לאור: |
2020
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| נושאים: | |
| גישה מקוונת: | https://doi.org/10.1007/s10853-020-04891-1 |
| פורמט: | MixedMaterials אלקטרוני Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664755 |
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| 300 | |a Title screen | ||
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| 330 | |a Two-dimensional (2D) materials have been utilized to design flexible field-effect transistors (FETs) with promising performance. However, flexible FETs still face challenges with poor switching features and ultra-low drive current. In this paper, a facile and repeatable large-area integration process is presented for inkjet-printed FETs with 2D materials active channels and PI films as gate dielectrics. The MoS2 FETs reported here exhibit n-type channel feature with an outstanding average subthreshold swing of 75 mV/dec, an on-state/off-state current ratio of 104, and on-state current up to 10 ?A at a power supply voltage of 3.0 V. Besides, MoS2–rGO FETs also exhibit n-type semiconductor features with good electrical properties by the inkjet-printing technology. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Journal of Materials Science | ||
| 463 | |t Vol. 55, iss. 27 |v [P. 12969-12979] |d 2020 | ||
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