All-inkjet-printed high-performance flexible MoS2 and MoS2-reduced graphene oxide field-effect transistors

All-inkjet-printed high-performance flexible MoS2 and MoS2-reduced graphene oxide field-effect transistors

Bibliographic Details
Parent link:Journal of Materials Science
Vol. 55, iss. 27.— 2020.— [P. 12969-12979]
Corporate Authors: Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов, Национальный исследовательский Томский политехнический университет Исследовательская школа химических и биомедицинских технологий
Other Authors: Jiang Zhi, Xiao Kuan, Chen Jinju, Wang Yan, Xu Zhaoquan, Sowade E. Enrico, Baumann R. R. Reinhard, Sheremet E. S. Evgeniya Sergeevna, Rodriguez (Rodriges) Contreras R. D. Raul David, Feng Zhesheng
Summary:Title screen
Two-dimensional (2D) materials have been utilized to design flexible field-effect transistors (FETs) with promising performance. However, flexible FETs still face challenges with poor switching features and ultra-low drive current. In this paper, a facile and repeatable large-area integration process is presented for inkjet-printed FETs with 2D materials active channels and PI films as gate dielectrics. The MoS2 FETs reported here exhibit n-type channel feature with an outstanding average subthreshold swing of 75 mV/dec, an on-state/off-state current ratio of 104, and on-state current up to 10 ?A at a power supply voltage of 3.0 V. Besides, MoS2–rGO FETs also exhibit n-type semiconductor features with good electrical properties by the inkjet-printing technology.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2020
Subjects:
электронный ресурс
труды учёных ТПУ
Online Access:https://doi.org/10.1007/s10853-020-04891-1
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664755
Description
Summary:Title screen
Two-dimensional (2D) materials have been utilized to design flexible field-effect transistors (FETs) with promising performance. However, flexible FETs still face challenges with poor switching features and ultra-low drive current. In this paper, a facile and repeatable large-area integration process is presented for inkjet-printed FETs with 2D materials active channels and PI films as gate dielectrics. The MoS2 FETs reported here exhibit n-type channel feature with an outstanding average subthreshold swing of 75 mV/dec, an on-state/off-state current ratio of 104, and on-state current up to 10 ?A at a power supply voltage of 3.0 V. Besides, MoS2–rGO FETs also exhibit n-type semiconductor features with good electrical properties by the inkjet-printing technology.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1007/s10853-020-04891-1

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