Optical Properties of Aluminum- and Silicon-Nitride Films and Al–Si–N Nanocomposite Coatings Deposited by Reactive Magnetron Sputtering
| Parent link: | Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques Vol. 15, iss. 1.— 2021.— [P. 139-146] |
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| Collectivité auteur: | |
| Autres auteurs: | , , , , |
| Résumé: | Title screen In this paper, we study the optical properties of aluminum- and silicon-nitride films and Al–Si–N coatings with variable atomic composition deposited by reactive magnetron sputtering on glass, silicon, and steel substrates. The absorption and luminescence characteristics are determined by the composition of the coatings and microstructure and depend on the physical properties of the substrate. The absorption and luminescence centers are associated with intrinsic defects in the nitrides and their simplest complexes. The relationships between the accumulation of growth defects, their interaction, the type of distribution of localized states, the band gap, and the stability of the optical properties are established. At an increase in the silicon content in the coatings, the degree of static induced disorder increases, and the contribution of the continuous distribution of the defect levels and interband absorption increases. Silicon-containing defects stabilize the optical properties of the coatings. Режим доступа: по договору с организацией-держателем ресурса |
| Langue: | anglais |
| Publié: |
2021
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| Sujets: | |
| Accès en ligne: | https://doi.org/10.1134/S1027451021010274 |
| Format: | Électronique Chapitre de livre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664739 |
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| 200 | 1 | |a Optical Properties of Aluminum- and Silicon-Nitride Films and Al–Si–N Nanocomposite Coatings Deposited by Reactive Magnetron Sputtering |f F. V. Konusov, S. K. Pavlov, A. L. Lauk [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 28 tit.] | ||
| 330 | |a In this paper, we study the optical properties of aluminum- and silicon-nitride films and Al–Si–N coatings with variable atomic composition deposited by reactive magnetron sputtering on glass, silicon, and steel substrates. The absorption and luminescence characteristics are determined by the composition of the coatings and microstructure and depend on the physical properties of the substrate. The absorption and luminescence centers are associated with intrinsic defects in the nitrides and their simplest complexes. The relationships between the accumulation of growth defects, their interaction, the type of distribution of localized states, the band gap, and the stability of the optical properties are established. At an increase in the silicon content in the coatings, the degree of static induced disorder increases, and the contribution of the continuous distribution of the defect levels and interband absorption increases. Silicon-containing defects stabilize the optical properties of the coatings. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | ||
| 463 | |t Vol. 15, iss. 1 |v [P. 139-146] |d 2021 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a nitrides | |
| 610 | 1 | |a films | |
| 610 | 1 | |a coatings | |
| 610 | 1 | |a band gap | |
| 610 | 1 | |a absorption coefficient | |
| 610 | 1 | |a interband absorption | |
| 610 | 1 | |a localized states | |
| 610 | 1 | |a growth defects | |
| 610 | 1 | |a нитриды | |
| 610 | 1 | |a покрытия | |
| 610 | 1 | |a коэффициент поглощения | |
| 701 | 1 | |a Konusov |b F. V. |c physicist |c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1958- |g Fedor Valerievich |3 (RuTPU)RU\TPU\pers\32570 |9 16491 | |
| 701 | 1 | |a Pavlov |b S. K. |c physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Sergey Konstantinovich |3 (RuTPU)RU\TPU\pers\32875 | |
| 701 | 1 | |a Lauk |b A. L. |c Physicist |c Leading engineer of Tomsk Polytechnic University |f 1957- |g Aleksandr Lukyanovich |3 (RuTPU)RU\TPU\pers\37675 | |
| 701 | 1 | |a Kabyshev |b A. V. |g Aleksandr Vasiljevich | |
| 701 | 1 | |a Gadirov |b R. M. |g Ruslan Mukhamedzhanovich | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа физики высокоэнергетических процессов |c (2017- ) |3 (RuTPU)RU\TPU\col\23551 |
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| 856 | 4 | |u https://doi.org/10.1134/S1027451021010274 | |
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