Effects of sputtering gas on the microstructure of Ir thin films deposited by HiPIMS and pulsed DC sputtering; Surface and Coatings Technology; Vol. 412

書目詳細資料
Parent link:Surface and Coatings Technology
Vol. 412.— 2021.— [127038, 5 p.]
主要作者: Zenkin S. P. Sergey Petrovich
Corporate Authors: Национальный исследовательский Томский политехнический университет (ТПУ) Инженерная школа новых производственных технологий (ИШНПТ) Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий" (НПЛ ИПЭПТ), Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов
其他作者: Gaydaychuk A. V. Alexander Valerievich, Linnik S. A. Stepan Andreevich
總結:Title screen
Due to its chemical inertness, hardness and thermal stability Ir finds a lot of industrial applications. One of the most important field is it use as a substrate material for the monocrystalline diamond heteroepitaxy. However, due to the extreme iridium price, as well as its high melting point, production of bulk iridium substrates is economically unfavorable. In this article we are focused on the Ir thin films production by pulsed DC and HiPIMS sputtering and study the effect of Ar and He working gases on the structure of the growing films. We have found that a sputtering rate reduction given by using of HiPIMS discharge in He is a one of the key factors of the intensified influence of the seed substrate and a growth of thermodynamically unfavorable iridium orientation. This combination can be used as a possible low-energy ion-assisted method for epitaxial growth of materials.
Режим доступа: по договору с организацией-держателем ресурса
語言:英语
出版: 2021
主題:
在線閱讀:https://doi.org/10.1016/j.surfcoat.2021.127038
格式: 電子 Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664644

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