Effects of sputtering gas on the microstructure of Ir thin films deposited by HiPIMS and pulsed DC sputtering
| Parent link: | Surface and Coatings Technology Vol. 412.— 2021.— [127038, 5 p.] |
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| Main Author: | |
| Corporate Authors: | , |
| Other Authors: | , |
| Summary: | Title screen Due to its chemical inertness, hardness and thermal stability Ir finds a lot of industrial applications. One of the most important field is it use as a substrate material for the monocrystalline diamond heteroepitaxy. However, due to the extreme iridium price, as well as its high melting point, production of bulk iridium substrates is economically unfavorable. In this article we are focused on the Ir thin films production by pulsed DC and HiPIMS sputtering and study the effect of Ar and He working gases on the structure of the growing films. We have found that a sputtering rate reduction given by using of HiPIMS discharge in He is a one of the key factors of the intensified influence of the seed substrate and a growth of thermodynamically unfavorable iridium orientation. This combination can be used as a possible low-energy ion-assisted method for epitaxial growth of materials. Режим доступа: по договору с организацией-держателем ресурса |
| Language: | English |
| Published: |
2021
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| Subjects: | |
| Online Access: | https://doi.org/10.1016/j.surfcoat.2021.127038 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664644 |
| Summary: | Title screen Due to its chemical inertness, hardness and thermal stability Ir finds a lot of industrial applications. One of the most important field is it use as a substrate material for the monocrystalline diamond heteroepitaxy. However, due to the extreme iridium price, as well as its high melting point, production of bulk iridium substrates is economically unfavorable. In this article we are focused on the Ir thin films production by pulsed DC and HiPIMS sputtering and study the effect of Ar and He working gases on the structure of the growing films. We have found that a sputtering rate reduction given by using of HiPIMS discharge in He is a one of the key factors of the intensified influence of the seed substrate and a growth of thermodynamically unfavorable iridium orientation. This combination can be used as a possible low-energy ion-assisted method for epitaxial growth of materials. Режим доступа: по договору с организацией-держателем ресурса |
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| DOI: | 10.1016/j.surfcoat.2021.127038 |