Low energy, high intensity metal ion implantation method for deep dopant containing layer formation; Surface and Coatings Technology; Vol. 355

Low energy, high intensity metal ion implantation method for deep dopant containing layer formation; Surface and Coatings Technology; Vol. 355

Dades bibliogràfiques
Parent link:	Surface and Coatings Technology Vol. 355.— 2018.— [P. 123-128]
Autor corporatiu:	Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Научная лаборатория высокоинтенсивной имплантации ионов
Altres autors:	Ryabchikov A. I. Aleksandr Ilyich, Shevelev A. E. Aleksey Eduardovich, Sivin D. O. Denis Olegovich, Ivanova A. I. Anna Ivanovna, Medvedev V. N. Vladislav Nikolaevich
Sumari:	Title screen This study describes the first results of high intensity macroparticle-free aluminum ion beam formation and its application to low ion energy implantation. A DC vacuum arc was used to produce aluminum plasma flow. A repetitively pulsed macroparticle-free high intensity aluminum ion beam was formed using a plasma immersion ion extraction combined with ion beam focusing. A very high current ion beam with the current up to 0.475 A at bias pulse duration of 4 [mu]s and the pulse repetition rate of 105 pulses per second was obtained. Nickel substrates were irradiated by aluminum ions with very high current densities up to 100 mA/cm2 and accelerating voltages up to 2.1 kV. The maximum fluence of implantation reached 1.2•1021 ion/сm2. The results of the element composition of the modified layer were also investigated Режим доступа: по договору с организацией-держателем ресурса
Idioma:	anglès
Publicat:	2018
Matèries:	электронный ресурс труды учёных ТПУ high intensity ion beam metal ion implantation intermetallic layers aluminum nickel ионные пучки имплантация ионы металлов алюминий никель слои
Accés en línia:	https://doi.org/10.1016/j.surfcoat.2018.02.111
Format:	Electrònic Capítol de llibre
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664533

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