Low energy, high intensity metal ion implantation method for deep dopant containing layer formation; Surface and Coatings Technology; Vol. 355
| Parent link: | Surface and Coatings Technology Vol. 355.— 2018.— [P. 123-128] |
|---|---|
| Institution som forfatter: | |
| Andre forfattere: | , , , , |
| Summary: | Title screen This study describes the first results of high intensity macroparticle-free aluminum ion beam formation and its application to low ion energy implantation. A DC vacuum arc was used to produce aluminum plasma flow. A repetitively pulsed macroparticle-free high intensity aluminum ion beam was formed using a plasma immersion ion extraction combined with ion beam focusing. A very high current ion beam with the current up to 0.475 A at bias pulse duration of 4 [mu]s and the pulse repetition rate of 105 pulses per second was obtained. Nickel substrates were irradiated by aluminum ions with very high current densities up to 100 mA/cm2 and accelerating voltages up to 2.1 kV. The maximum fluence of implantation reached 1.2•1021 ion/сm2. The results of the element composition of the modified layer were also investigated Режим доступа: по договору с организацией-держателем ресурса |
| Sprog: | engelsk |
| Udgivet: |
2018
|
| Fag: | |
| Online adgang: | https://doi.org/10.1016/j.surfcoat.2018.02.111 |
| Format: | MixedMaterials Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664533 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 664533 | ||
| 005 | 20250411114503.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\35717 | ||
| 035 | |a RU\TPU\network\27797 | ||
| 090 | |a 664533 | ||
| 100 | |a 20210419d2018 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Low energy, high intensity metal ion implantation method for deep dopant containing layer formation |f A. I. Ryabchikov, A. E. Shevelev, D. O. Sivin [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 20 tit.] | ||
| 330 | |a This study describes the first results of high intensity macroparticle-free aluminum ion beam formation and its application to low ion energy implantation. A DC vacuum arc was used to produce aluminum plasma flow. A repetitively pulsed macroparticle-free high intensity aluminum ion beam was formed using a plasma immersion ion extraction combined with ion beam focusing. A very high current ion beam with the current up to 0.475 A at bias pulse duration of 4 [mu]s and the pulse repetition rate of 105 pulses per second was obtained. Nickel substrates were irradiated by aluminum ions with very high current densities up to 100 mA/cm2 and accelerating voltages up to 2.1 kV. The maximum fluence of implantation reached 1.2•1021 ion/сm2. The results of the element composition of the modified layer were also investigated | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Surface and Coatings Technology | ||
| 463 | |t Vol. 355 |v [P. 123-128] |d 2018 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a high intensity ion beam | |
| 610 | 1 | |a metal ion implantation | |
| 610 | 1 | |a intermetallic layers | |
| 610 | 1 | |a aluminum | |
| 610 | 1 | |a nickel | |
| 610 | 1 | |a ионные пучки | |
| 610 | 1 | |a имплантация | |
| 610 | 1 | |a ионы металлов | |
| 610 | 1 | |a алюминий | |
| 610 | 1 | |a никель | |
| 610 | 1 | |a слои | |
| 701 | 1 | |a Ryabchikov |b A. I. |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |c physicist |f 1950- |g Aleksandr Ilyich |3 (RuTPU)RU\TPU\pers\30912 |9 15150 | |
| 701 | 1 | |a Shevelev |b A. E. |c Physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Aleksey Eduardovich |3 (RuTPU)RU\TPU\pers\36832 |9 19861 | |
| 701 | 1 | |a Sivin |b D. O. |c physicist |c Senior researcher of Tomsk Polytechnic University, Candidate of technical sciences |f 1978- |g Denis Olegovich |3 (RuTPU)RU\TPU\pers\34240 | |
| 701 | 1 | |a Ivanova |b A. I. |c physicist |c Associate Scientist of Tomsk Polytechnic University |f 1987- |g Anna Ivanovna |3 (RuTPU)RU\TPU\pers\36986 |9 20002 | |
| 701 | 1 | |a Medvedev |b V. N. |g Vladislav Nikolaevich | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа ядерных технологий |b Научная лаборатория высокоинтенсивной имплантации ионов |3 (RuTPU)RU\TPU\col\23698 |
| 801 | 2 | |a RU |b 63413507 |c 20210419 |g RCR | |
| 856 | 4 | |u https://doi.org/10.1016/j.surfcoat.2018.02.111 | |
| 942 | |c CF | ||