All-inkjet-printed MoS2 field-effect transistors on paper for low-cost and flexible electronics

All-inkjet-printed MoS2 field-effect transistors on paper for low-cost and flexible electronics

Dades bibliogràfiques
Parent link:Applied Nanoscience
Vol. 10, iss. 9.— 2020.— [P. 3649–3658]
Autor corporatiu: Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов, Национальный исследовательский Томский политехнический университет Исследовательская школа химических и биомедицинских технологий
Altres autors: Jiang Zhi, Chen Long, Chen Jin-Ju, Wang Yan, Xu Zhao-quan, Sowade Enrico E., Baumann Reinhard R. R., Sheremet E. S. Evgeniya Sergeevna, Rodriguez (Rodriges) Contreras R. D. Raul David, Feng Zhesheng
Sumari:Title screen
All-inkjet-printing of transistors has received much attention for low cost and flexible integrated circuits. However, most flexible field-effect transistors (FETs) based on the emerging two-dimensional materials suffer from the high cost of substrate and electrode materials. The requirements for high-temperature synthesis and precise control in processing add another layer of complexity. To overcome these issues, low-cost flexible paper-based MoS2 FETs were fabricated by inkjet printing of MoS2 channel materials on paper. Additionally, we proposed and achieved the mask-less and low-temperature formation of source and drain electrodes on paper using in-situ selective-area copper reduction. A low sub-threshold swing of 80 mV/dec, high on/off ratio of 105, and very high turn-on current (Ion) of 200 ?A of the paper-based flexible MoS2 FETs were demonstrated using the proposed low-cost and facile all-inkjet-printing technique. The all-inkjet-printing technique assisted by in-situ copper reduction opens new opportunities for low-cost and batch fabrication of paper-based electronic devices in ambient conditions.
Режим доступа: по договору с организацией-держателем ресурса
Idioma:anglès
Publicat: 2020
Matèries:
электронный ресурс
труды учёных ТПУ
MoS2
sub-threshold swing
FETs
nanosheets
нанолисты
Accés en línia:https://doi.org/10.1007/s13204-020-01438-3
Format: Electrònic Capítol de llibre
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664475

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