All-inkjet-printed MoS2 field-effect transistors on paper for low-cost and flexible electronics; Applied Nanoscience; Vol. 10, iss. 9
| Parent link: | Applied Nanoscience Vol. 10, iss. 9.— 2020.— [P. 3649–3658] |
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| Corporate Authors: | , |
| מחברים אחרים: | , , , , , , , , , |
| סיכום: | Title screen All-inkjet-printing of transistors has received much attention for low cost and flexible integrated circuits. However, most flexible field-effect transistors (FETs) based on the emerging two-dimensional materials suffer from the high cost of substrate and electrode materials. The requirements for high-temperature synthesis and precise control in processing add another layer of complexity. To overcome these issues, low-cost flexible paper-based MoS2 FETs were fabricated by inkjet printing of MoS2 channel materials on paper. Additionally, we proposed and achieved the mask-less and low-temperature formation of source and drain electrodes on paper using in-situ selective-area copper reduction. A low sub-threshold swing of 80 mV/dec, high on/off ratio of 105, and very high turn-on current (Ion) of 200 ?A of the paper-based flexible MoS2 FETs were demonstrated using the proposed low-cost and facile all-inkjet-printing technique. The all-inkjet-printing technique assisted by in-situ copper reduction opens new opportunities for low-cost and batch fabrication of paper-based electronic devices in ambient conditions. Режим доступа: по договору с организацией-держателем ресурса |
| שפה: | אנגלית |
| יצא לאור: |
2020
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| נושאים: | |
| גישה מקוונת: | https://doi.org/10.1007/s13204-020-01438-3 |
| פורמט: | אלקטרוני Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664475 |
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| 330 | |a All-inkjet-printing of transistors has received much attention for low cost and flexible integrated circuits. However, most flexible field-effect transistors (FETs) based on the emerging two-dimensional materials suffer from the high cost of substrate and electrode materials. The requirements for high-temperature synthesis and precise control in processing add another layer of complexity. To overcome these issues, low-cost flexible paper-based MoS2 FETs were fabricated by inkjet printing of MoS2 channel materials on paper. Additionally, we proposed and achieved the mask-less and low-temperature formation of source and drain electrodes on paper using in-situ selective-area copper reduction. A low sub-threshold swing of 80 mV/dec, high on/off ratio of 105, and very high turn-on current (Ion) of 200 ?A of the paper-based flexible MoS2 FETs were demonstrated using the proposed low-cost and facile all-inkjet-printing technique. The all-inkjet-printing technique assisted by in-situ copper reduction opens new opportunities for low-cost and batch fabrication of paper-based electronic devices in ambient conditions. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Applied Nanoscience | ||
| 463 | |t Vol. 10, iss. 9 |v [P. 3649–3658] |d 2020 | ||
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