Ion-Induced Defects in Graphite: A Combined Kelvin Probe and Raman Microscopy Investigation; Physica Status Solidi A; Vol. 216, iss. 19
| Parent link: | Physica Status Solidi A: Journal Vol. 216, iss. 19.— 2019.— [1900055, 8 p.] |
|---|---|
| निगमित लेखकों: | , |
| अन्य लेखक: | , , , , , , , , , , , , , |
| सारांश: | Title screen Carbon nanomaterials are important for future sensors and electronics. Defects determine the material properties, therefore, it is critical to find new ways to investigate defects at the nanoscale. In this context, Raman spectroscopy (RS) is the tool of choice to study defects in carbon nanomaterials. On the other hand, Kelvin probe force microscopy (KPFM) provides structural and surface potential information at the nanoscale. Here, the authors demonstrate the synergistic application of these methods in the investigation of ion-beam-induced defects in graphite. KPFM and RS imaging are used for visualizing ion-induced defects in a wide range of ion doses from 1010 to 1016 ions cm-2. For the lower range of ion dose, the authors find that RS provides image contrast for the different defect regions in graphite up to a dose of 5•1013 ions cm-2. For higher doses, the sp2 carbon concentration becomes so small that the Raman spectra get dominated by broad amorphous carbon bands. For this dose range, the KPFM contrast allows the defective regions to be differentiated. This contrast in KPFM originates from sp3 carbons that act as charge traps. The results show that KPFM and Raman microscopy make a powerful and necessary combination for studying the spatial distribution of defects in carbon. |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2019
|
| विषय: | |
| ऑनलाइन पहुंच: | https://doi.org/10.1002/pssa.201900055 |
| स्वरूप: | इलेक्ट्रोनिक पुस्तक अध्याय |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664324 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 664324 | ||
| 005 | 20250915112034.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\35508 | ||
| 035 | |a RU\TPU\network\35368 | ||
| 090 | |a 664324 | ||
| 100 | |a 20210408d2019 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a US | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Ion-Induced Defects in Graphite: A Combined Kelvin Probe and Raman Microscopy Investigation |f R. D. Rodriguez (Rodriges) Contreras, Z. Khan, Ma Bing [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 38 tit.] | ||
| 330 | |a Carbon nanomaterials are important for future sensors and electronics. Defects determine the material properties, therefore, it is critical to find new ways to investigate defects at the nanoscale. In this context, Raman spectroscopy (RS) is the tool of choice to study defects in carbon nanomaterials. On the other hand, Kelvin probe force microscopy (KPFM) provides structural and surface potential information at the nanoscale. Here, the authors demonstrate the synergistic application of these methods in the investigation of ion-beam-induced defects in graphite. KPFM and RS imaging are used for visualizing ion-induced defects in a wide range of ion doses from 1010 to 1016 ions cm-2. For the lower range of ion dose, the authors find that RS provides image contrast for the different defect regions in graphite up to a dose of 5•1013 ions cm-2. For higher doses, the sp2 carbon concentration becomes so small that the Raman spectra get dominated by broad amorphous carbon bands. For this dose range, the KPFM contrast allows the defective regions to be differentiated. This contrast in KPFM originates from sp3 carbons that act as charge traps. The results show that KPFM and Raman microscopy make a powerful and necessary combination for studying the spatial distribution of defects in carbon. | ||
| 461 | |t Physica Status Solidi A |o Journal | ||
| 463 | |t Vol. 216, iss. 19 |v [1900055, 8 p.] |d 2019 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a дефекты | |
| 610 | 1 | |a графиты | |
| 610 | 1 | |a микроскопия | |
| 610 | 1 | |a углеродные наноматериалы | |
| 610 | 1 | |a рамановская спектроскопия | |
| 701 | 1 | |a Rodriguez (Rodriges) Contreras |b R. D. |c Venezuelan physicist, doctor of science |c Professor of Tomsk Polytechnic University |f 1982- |g Raul David |3 (RuTPU)RU\TPU\pers\39942 |9 21179 | |
| 701 | 1 | |a Khan |b Z. |g Zoheb | |
| 701 | 0 | |a Ma Bing | |
| 701 | 1 | |a Mukherjee |b A. |g Ashutosh | |
| 701 | 1 | |a Meszmer |b P. |g Peter | |
| 701 | 1 | |a Kalbacova |b Ja. |g Jana | |
| 701 | 1 | |a Garratt |b E. |g Elias | |
| 701 | 1 | |a Harsha |b S. |g Shah | |
| 701 | 1 | |a Heilmann |b J. |g Jens | |
| 701 | 1 | |a Hight Walker |b A. R. |g Angela | |
| 701 | 1 | |a Wunderle |b B. |g Bernhard | |
| 701 | 1 | |a Sheremet |b E. S. |c physicist |c Professor of Tomsk Polytechnic University |f 1988- |g Evgeniya Sergeevna |3 (RuTPU)RU\TPU\pers\40027 |9 21197 | |
| 701 | 1 | |a Hietschold |b M. |g Michael | |
| 701 | 1 | |a Zahn |b D. R. T. |g Dietrich | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа новых производственных технологий |b Отделение материаловедения |3 (RuTPU)RU\TPU\col\23508 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа химических и биомедицинских технологий |c (2017- ) |3 (RuTPU)RU\TPU\col\23537 |
| 801 | 2 | |a RU |b 63413507 |c 20210409 |g RCR | |
| 850 | |a 63413507 | ||
| 856 | 4 | |u https://doi.org/10.1002/pssa.201900055 | |
| 942 | |c CF | ||