Surface modification of Al by high-intensity low-energy Ti-ion implantation: Microstructure, mechanical and tribological properties
| Parent link: | Surface and Coatings Technology Vol. 372.— 2019.— [8 p.] |
|---|---|
| Corporate Authors: | , |
| Andre forfattere: | , , , , |
| Summary: | Title screen A high-intensity metal ribbon ion beam was generated using plasma immersion extraction and the acceleration of the metal ions with their subsequent ballistic focusing using a cylindrical grid electrode under a repetitively pulsed bias. To generate the dense metal plasma flow, two water-cooled vacuum arc evaporators with Ti cathodes were used. The ion current density reached 43 mA/cm2 at the arc discharge current of 130 A. High-intensity ion implantation (HIII) with a low ion energy ribbon beam was used for the surface modification of the aluminium. The irradiation fluence was changed from 1.5•1020 ion/cm2 to 4•1020 ion/cm2 with a corresponding increase in the implantation temperature from 623 to 823 K. The structure and composition of the Ti-implanted aluminium were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDX). The mechanical properties and wear resistance were measured using nanoindentation and “pin-on-disk” testing, respectively. It was shown that the HIII method can be used to form a deep intermetallic Al3Ti layer. It has been established that a thin (0.4 [mu]m) modified layer with a hcp Ti(Al) structure is only formed on the surface at 623 K, while the formation of the ordered Al3Ti intermetallic phase occurs at the implantation temperatures of 723 and 823 K. Despite the significant ion sputtering of the surface, the thickness of the modified layer increases from ~1 [mu]m to ~6 [mu]m, and the implantation temperature rises from 723 to 823 K. It was found that the homogeneous intermetallic Al3Ti layer with a thickness of up to 5 [mu]m was formed at 823 К. The mechanical and tribological properties of the aluminium were substantially improved after HIII. For the Ti-implanted aluminium, the hardness of the surface layer increases from 0.4 GPa (undoped Al) to 3.5-4 GPa, while the wear resistance increases by more than an order of magnitude. Режим доступа: по договору с организацией-держателем ресурса |
| Sprog: | engelsk |
| Udgivet: |
2019
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| Fag: | |
| Online adgang: | https://doi.org/10.1016/j.surfcoat.2019.05.020 |
| Format: | Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664302 |
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| 200 | 1 | |a Surface modification of Al by high-intensity low-energy Ti-ion implantation: Microstructure, mechanical and tribological properties |f A. I. Ryabchikov, E. B. Kashkarov, A. E. Shevelev [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 38 tit.] | ||
| 330 | |a A high-intensity metal ribbon ion beam was generated using plasma immersion extraction and the acceleration of the metal ions with their subsequent ballistic focusing using a cylindrical grid electrode under a repetitively pulsed bias. To generate the dense metal plasma flow, two water-cooled vacuum arc evaporators with Ti cathodes were used. The ion current density reached 43 mA/cm2 at the arc discharge current of 130 A. High-intensity ion implantation (HIII) with a low ion energy ribbon beam was used for the surface modification of the aluminium. The irradiation fluence was changed from 1.5•1020 ion/cm2 to 4•1020 ion/cm2 with a corresponding increase in the implantation temperature from 623 to 823 K. The structure and composition of the Ti-implanted aluminium were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDX). The mechanical properties and wear resistance were measured using nanoindentation and “pin-on-disk” testing, respectively. It was shown that the HIII method can be used to form a deep intermetallic Al3Ti layer. It has been established that a thin (0.4 [mu]m) modified layer with a hcp Ti(Al) structure is only formed on the surface at 623 K, while the formation of the ordered Al3Ti intermetallic phase occurs at the implantation temperatures of 723 and 823 K. Despite the significant ion sputtering of the surface, the thickness of the modified layer increases from ~1 [mu]m to ~6 [mu]m, and the implantation temperature rises from 723 to 823 K. It was found that the homogeneous intermetallic Al3Ti layer with a thickness of up to 5 [mu]m was formed at 823 К. The mechanical and tribological properties of the aluminium were substantially improved after HIII. For the Ti-implanted aluminium, the hardness of the surface layer increases from 0.4 GPa (undoped Al) to 3.5-4 GPa, while the wear resistance increases by more than an order of magnitude. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Surface and Coatings Technology | ||
| 463 | |t Vol. 372 |v [8 p.] |d 2019 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a ion implantation | |
| 610 | 1 | |a ribbon ion beamIntermetallics | |
| 610 | 1 | |a aluminium | |
| 610 | 1 | |a titanium | |
| 610 | 1 | |a surface modification | |
| 610 | 1 | |a ионная имплантация | |
| 610 | 1 | |a ионные пучки | |
| 610 | 1 | |a алюминий | |
| 610 | 1 | |a титан | |
| 610 | 1 | |a модификации | |
| 610 | 1 | |a поверхности | |
| 701 | 1 | |a Ryabchikov |b A. I. |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |c physicist |f 1950- |g Aleksandr Ilyich |3 (RuTPU)RU\TPU\pers\30912 | |
| 701 | 1 | |a Kashkarov |b E. B. |c Physicist |c Associate Professor, Researcher of Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences |f 1991- |g Egor Borisovich |3 (RuTPU)RU\TPU\pers\34949 |9 18267 | |
| 701 | 1 | |a Shevelev |b A. E. |c Physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Aleksey Eduardovich |3 (RuTPU)RU\TPU\pers\36832 | |
| 701 | 1 | |a Obrosov |b A. |g Aleksey | |
| 701 | 1 | |a Sivin |b D. O. |c physicist |c Senior researcher of Tomsk Polytechnic University, Candidate of technical sciences |f 1978- |g Denis Olegovich |3 (RuTPU)RU\TPU\pers\34240 | |
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