Optimization of plasma dynamic synthesis of ultradispersed silicon carbide and obtaining SPS ceramics on its basis; International Journal of Refractory Metals and Hard Materials; Vol. 79
| Источник: | International Journal of Refractory Metals and Hard Materials Vol. 79.— 2019.— P. 123-130 |
|---|---|
| Другие авторы: | , , , , , |
| Примечания: | Title screen Obtaining SiC ceramics with high physical and mechanical properties requires the use of high purity products with a single crystal structure of particles. Such a product can be obtained by the plasma dynamic synthesis based on using a pulsed arc discharge. This paper presents that the way of an arc discharge ignition significantly influences both the effectiveness of the precursor sublimation and the phase composition of the final ultradispersed product. The arc discharge ignition through a thermal breakdown mechanism is the most efficient way to implement the plasma dynamic synthesis of silicon carbide ?-SiC and achieve its yield up to ~99?wt% of the product. The synthesized powder is characterized by a single crystal structure of particles and their average size of ~70?nm. Spark plasma sintering of the as-prepared materials allows improving the ceramics quality in comparison with the ceramics sintered from the commercial silicon carbide. This effect is especially observed at sintering the ceramics with the use of Al-B-C additives, when the higher mechanical characteristics (??=?98.8%, H?=?26?GPa) are achieved AM_Agreement |
| Язык: | английский |
| Опубликовано: |
2019
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| Предметы: | |
| Online-ссылка: | https://doi.org/10.1016/j.ijrmhm.2018.11.016 |
| Формат: | MixedMaterials Электронный ресурс Статья |
| Запись в KOHA: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664274 |
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| 200 | 1 | |a Optimization of plasma dynamic synthesis of ultradispersed silicon carbide and obtaining SPS ceramics on its basis |f A. A. Sivkov, D. S. Nikitin, I. I. Shanenkov [et al.] | |
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| 300 | |a Title screen | ||
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| 330 | |a Obtaining SiC ceramics with high physical and mechanical properties requires the use of high purity products with a single crystal structure of particles. Such a product can be obtained by the plasma dynamic synthesis based on using a pulsed arc discharge. This paper presents that the way of an arc discharge ignition significantly influences both the effectiveness of the precursor sublimation and the phase composition of the final ultradispersed product. The arc discharge ignition through a thermal breakdown mechanism is the most efficient way to implement the plasma dynamic synthesis of silicon carbide ?-SiC and achieve its yield up to ~99?wt% of the product. The synthesized powder is characterized by a single crystal structure of particles and their average size of ~70?nm. Spark plasma sintering of the as-prepared materials allows improving the ceramics quality in comparison with the ceramics sintered from the commercial silicon carbide. This effect is especially observed at sintering the ceramics with the use of Al-B-C additives, when the higher mechanical characteristics (??=?98.8%, H?=?26?GPa) are achieved | ||
| 371 | 0 | |a AM_Agreement | |
| 461 | 1 | |t International Journal of Refractory Metals and Hard Materials | |
| 463 | 1 | |t Vol. 79 |v P. 123-130 |d 2019 | |
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| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a plasma dynamic synthesis | |
| 610 | 1 | |a silicon carbide | |
| 610 | 1 | |a ultradispersed powder | |
| 610 | 1 | |a single crystal particles | |
| 610 | 1 | |a spark plasma sintering | |
| 610 | 1 | |a ceramics | |
| 610 | 1 | |a керамика | |
| 610 | 1 | |a ультрадисперсные порошки | |
| 701 | 1 | |a Sivkov |b A. A. |c Specialist in the field of electric power engineering |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1951- |g Aleksandr Anatolyevich |3 (RuTPU)RU\TPU\pers\32273 |9 16262 | |
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| 701 | 1 | |a Shanenkov |b I. I. |c specialist in the field of electric power engineering |c Associate Professor of the Department of Tomsk Polytechnic University, Candidate of Sciences |f 1990- |g Ivan Igorevich |3 (RuTPU)RU\TPU\pers\32880 |9 16728 | |
| 701 | 1 | |a Ivashutenko |b A. S. |c specialist in the field of electrical engineering |c Associate Professor of the Tomsk Polytechnic University, Candidate of technical sciences |f 1981- |g Alexander Sergeevich |3 (RuTPU)RU\TPU\pers\33076 |9 16908 | |
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