Effect of high intensity short-pulsed ion irradiation on optical properties of multilayer coatings of aluminum and silicon nitrides; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 494-495
| Parent link: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 494-495.— 2021.— [Р. 1-9] |
|---|---|
| Egile korporatiboa: | , |
| Beste egile batzuk: | , , , , , |
| Gaia: | Title screen The effect of high-intensity short-pulsed ion irradiation on the optical properties of multilayer coatings, consisting from thin layers of aluminum and silicon nitrides, deposited by reactive magnetron sputtering on glass, steel and silicon substrates, has been investigated. The larger the thickness of AlN layers, the stronger the effect of growth and radiation defects on multilayer coating properties. When the concentration of growth defects increases and its interaction intensifies, the radiation resistance of coatings grows. In general, the radiation resistance of coatings was due to the wide band gap of their constituent nitrides and the high concentration of strongly interacting growth defects distributed along the inter-crystallite and interlayer boundaries. Режим доступа: по договору с организацией-держателем ресурса |
| Hizkuntza: | ingelesa |
| Argitaratua: |
2021
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| Gaiak: | |
| Sarrera elektronikoa: | https://doi.org/10.1016/j.nimb.2021.02.007 |
| Formatua: | Baliabide elektronikoa Liburu kapitulua |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664206 |
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| 200 | 1 | |a Effect of high intensity short-pulsed ion irradiation on optical properties of multilayer coatings of aluminum and silicon nitrides |f F. V. Konusov, S. K. Pavlov, A. L. Lauk [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 28 tit.] | ||
| 330 | |a The effect of high-intensity short-pulsed ion irradiation on the optical properties of multilayer coatings, consisting from thin layers of aluminum and silicon nitrides, deposited by reactive magnetron sputtering on glass, steel and silicon substrates, has been investigated. The larger the thickness of AlN layers, the stronger the effect of growth and radiation defects on multilayer coating properties. When the concentration of growth defects increases and its interaction intensifies, the radiation resistance of coatings grows. In general, the radiation resistance of coatings was due to the wide band gap of their constituent nitrides and the high concentration of strongly interacting growth defects distributed along the inter-crystallite and interlayer boundaries. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | ||
| 463 | |t Vol. 494-495 |v [Р. 1-9] |d 2021 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a ion beam | |
| 610 | 1 | |a Al-Si-N coatings | |
| 610 | 1 | |a radiation defects | |
| 610 | 1 | |a absorption | |
| 610 | 1 | |a ионные пучки | |
| 610 | 1 | |a радиационные дефекты | |
| 610 | 1 | |a абсорбция | |
| 701 | 1 | |a Konusov |b F. V. |c physicist |c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1958- |g Fedor Valerievich |3 (RuTPU)RU\TPU\pers\32570 |9 16491 | |
| 701 | 1 | |a Pavlov |b S. K. |c physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Sergey Konstantinovich |3 (RuTPU)RU\TPU\pers\32875 | |
| 701 | 1 | |a Lauk |b A. L. |c Physicist |c Leading engineer of Tomsk Polytechnic University |f 1957- |g Aleksandr Lukyanovich |3 (RuTPU)RU\TPU\pers\37675 | |
| 701 | 1 | |a Tarbokov |b V. A. |c specialist in the field of material science |c Leading engineer of Tomsk Polytechnic University, Candidate of technical sciences |f 1969- |g Vladislav Aleksandrovich |3 (RuTPU)RU\TPU\pers\41878 | |
| 701 | 1 | |a Gadirov |b R. M. |g Ruslan Mukhamedzhanovich | |
| 701 | 1 | |a Remnev |b G. E. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Gennady Efimovich |3 (RuTPU)RU\TPU\pers\31500 | |
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