High-performance and broadband photodetection of bicrystalline (GaN)1-x(ZnO)x solid solution nanowires via crystal defect engineering; Journal of Materials Science & Technology; Vol. 85
| Parent link: | Journal of Materials Science & Technology Vol. 85.— 2021.— [P. 255-262] |
|---|---|
| Müşterek Yazar: | |
| Diğer Yazarlar: | , , , , , , , , , , |
| Özet: | Title screen Crystal defect engineering is widely used as an effective approach to regulate the optical and optoelectronic properties of semiconductor nanostructures. However, photogenerated electron-hole pair recombination centers caused by structural defects usually lead to the reduction of optoelectronic performance. In this work, a high-performance photodetector based on (GaN)1-x(ZnO)x solid solution nanowire with bicrystal structure is fabricated and it shows excellent photoresponse to ultraviolet and visible light. The highest responsivity of the photodetector is as high as 60, 86 and 43 A/W under the irradiation of 365 nm, 532 nm and 650 nm, respectively. The corresponding response time is as fast as 170, 320 and 160 ms. Such wide spectral responses can be attributed to various intermediate energy levels induced by the introduction of various structural defects and dopants in the solid solution nanowire. Moreover, the peculiar bicrystal boundary along the axial direction of the nanowire provides two parallel and fast transmission channels for photo-generated carriers, reducing the recombination of photo-generated carriers. Our findings provide a valued example using crystal defect engineering to broaden the photoresponse range and improve the photodetector performance and thus can be extended to other material systems for various optoelectronic applications. Режим доступа: по договору с организацией-держателем ресурса |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
2021
|
| Konular: | |
| Online Erişim: | https://doi.org/10.1016/j.jmst.2021.01.020 |
| Materyal Türü: | Elektronik Kitap Bölümü |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=664104 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 664104 | ||
| 005 | 20250425134522.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\35288 | ||
| 035 | |a RU\TPU\network\33920 | ||
| 090 | |a 664104 | ||
| 100 | |a 20210326d2021 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a NL | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a High-performance and broadband photodetection of bicrystalline (GaN)1-x(ZnO)x solid solution nanowires via crystal defect engineering |f Ma Zongyi, Li Gang, Zhang Xinglai [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 54 tit.] | ||
| 330 | |a Crystal defect engineering is widely used as an effective approach to regulate the optical and optoelectronic properties of semiconductor nanostructures. However, photogenerated electron-hole pair recombination centers caused by structural defects usually lead to the reduction of optoelectronic performance. In this work, a high-performance photodetector based on (GaN)1-x(ZnO)x solid solution nanowire with bicrystal structure is fabricated and it shows excellent photoresponse to ultraviolet and visible light. The highest responsivity of the photodetector is as high as 60, 86 and 43 A/W under the irradiation of 365 nm, 532 nm and 650 nm, respectively. The corresponding response time is as fast as 170, 320 and 160 ms. Such wide spectral responses can be attributed to various intermediate energy levels induced by the introduction of various structural defects and dopants in the solid solution nanowire. Moreover, the peculiar bicrystal boundary along the axial direction of the nanowire provides two parallel and fast transmission channels for photo-generated carriers, reducing the recombination of photo-generated carriers. Our findings provide a valued example using crystal defect engineering to broaden the photoresponse range and improve the photodetector performance and thus can be extended to other material systems for various optoelectronic applications. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Journal of Materials Science & Technology | ||
| 463 | |t Vol. 85 |v [P. 255-262] |d 2021 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a (GaN)1-x(ZnO)x | |
| 610 | 1 | |a nanowires | |
| 610 | 1 | |a photodetectors | |
| 610 | 1 | |a broadband photodetection | |
| 610 | 1 | |a crystal defect engineering | |
| 610 | 1 | |a нанопроволоки | |
| 610 | 1 | |a фотоприемники | |
| 610 | 1 | |a широкополосные корректоры | |
| 610 | 1 | |a инженерия | |
| 701 | 0 | |a Ma Zongyi | |
| 701 | 0 | |a Li Gang | |
| 701 | 0 | |a Zhang Xinglai | |
| 701 | 0 | |a Li Jing | |
| 701 | 0 | |a Zhang Cai | |
| 701 | 0 | |a Ma Yonghui | |
| 701 | 0 | |a Zhang Jian | |
| 701 | 0 | |a Leng Bing | |
| 701 | 1 | |a Usoltseva |b N. V. |c Chemical Engineer |c Engineer of Tomsk Polytechnic University |f 1985- |g Natalia Vasilievna |3 (RuTPU)RU\TPU\pers\31509 |9 15670 | |
| 701 | 1 | |a An |b V. V. |c chemist |c Professor of Tomsk Polytechnic University, Doctor of Chemical Sciences |f 1972- |g Vladimir Vilorievich |3 (RuTPU)RU\TPU\pers\33866 |9 17455 | |
| 701 | 0 | |a Lyu Baodan | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа новых производственных технологий |b Научно-образовательный центр Н. М. Кижнера |3 (RuTPU)RU\TPU\col\23556 |
| 801 | 0 | |a RU |b 63413507 |c 20210326 |g RCR | |
| 850 | |a 63413507 | ||
| 856 | 4 | |u https://doi.org/10.1016/j.jmst.2021.01.020 | |
| 942 | |c CF | ||