Molecular Dynamics Simulations of Vacancy Generation and Migration near a Monocrystalline Silicon Surface during Energetic Cluster Ion Implantation; Coatings; Vol. 10, iss. 2

Molecular Dynamics Simulations of Vacancy Generation and Migration near a Monocrystalline Silicon Surface during Energetic Cluster Ion Implantation; Coatings; Vol. 10, iss. 2

التفاصيل البيبلوغرافية
Parent link:Coatings
Vol. 10, iss. 2.— 2020.— [146, 10 p. ]
مؤلف مشترك: Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий"
مؤلفون آخرون: Liang Guoying, Zhong Haowen, Wang Younian, Zhang Shijian, Xu Mofei, Kuang Shicheng, Ren Jianhui, Zhang Nan, Yan Sha, Yu Xiao, Remnev G. E. Gennady Efimovich, Le Xiaoyun
الملخص:The process of ion implantation often involves vacancy generation and migration. The vacancy generation and migration near a monocrystalline silicon surface during three kinds of energetic Si35 cluster ion implantations were investigated by molecular dynamics simulations in the present work. The patterns of vacancy generation and migration, as well as the implantation-induced amorphous structure, were analyzed according to radial distribution function, Wigner–Seitz cell, and identify diamond structure analytical methods. A lot of vacancies rapidly generate and migrate in primary directions and form an amorphous structure in the first two picoseconds. The cluster with higher incident kinetic energy can induce the generation and migration of more vacancies and a deeper amorphous structure. Moreover, boundaries have a loading–unloading effect, where interstitial atoms load into the boundary, which then acts as a source, emitting interstitial atoms to the target and inducing the generation of vacancies again. These results provide more insight into doping silicon via ion implantation.
اللغة:الإنجليزية
منشور في: 2020
الموضوعات:
труды учёных ТПУ
электронный ресурс
molecular dynamics
vacancy
silicon
cluster
implantation
вакансии
кремний
кластеры
имплантация
الوصول للمادة أونلاين:https://doi.org/10.3390/coatings10020146
التنسيق: الكتروني فصل الكتاب
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=663978

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