Investigation of Regularities of High-Intensity Ion Implantation in Combination with Subsequent Exposure to the Surface of a High-Current Electron Beam; Energy Fluxes and Radiation Effects (EFRE-2020 online)
| Parent link: | Energy Fluxes and Radiation Effects (EFRE-2020 online).— 2020.— [P. 702-706] |
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| Yhteisötekijä: | |
| Muut tekijät: | , , , , , |
| Yhteenveto: | Title screen Low energy, high intensity ion implantation method opens up unique opportunities for ion-doping of metals and alloys at depths of tens and hundreds of micrometers. Ion implantation at ion current densities of tens and hundreds of mA/cm 2 is carried out at elevated temperatures of the surface layers of the irradiated target. High temperatures can lead to an increase in the grain size of crystalline materials and, as a result, to a degradation of material properties. One of the possible solutions to this problem seems to be a combination of high-intensity implantation of ions with subsequent exposure to the surface of a high-current electron beam. The paper presents the results of studies of the features of changes in the elemental composition and microstructure of titanium alloy during high-intensity implantation of nitrogen, aluminum ions of low and ultra-low energy. The influence of the target temperature regimes on the depth distribution of the implanted dopant and the structure of doped and matrix material is studied. The influence of subsequent modification of the ion-doped layer by the action on the surface of the pulsed high-current electron beams of microsecond duration is studied. The work presents the results of the studying the regularities of changes in the depth distribution of alloying elements, microstructure and phase composition of the modified and matrix layers by optical metallography, x-ray spectral and x-ray structural analysis. Режим доступа: по договору с организацией-держателем ресурса |
| Kieli: | englanti |
| Julkaistu: |
2020
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| Aiheet: | |
| Linkit: | https://doi.org/10.1109/EFRE47760.2020.9242058 |
| Aineistotyyppi: | Elektroninen Kirjan osa |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=663055 |
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| 200 | 1 | |a Investigation of Regularities of High-Intensity Ion Implantation in Combination with Subsequent Exposure to the Surface of a High-Current Electron Beam |f A. I. Ryabchikov, S. V. Dektyarev, O. S. Korneva [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 706 (8 tit.)] | ||
| 330 | |a Low energy, high intensity ion implantation method opens up unique opportunities for ion-doping of metals and alloys at depths of tens and hundreds of micrometers. Ion implantation at ion current densities of tens and hundreds of mA/cm 2 is carried out at elevated temperatures of the surface layers of the irradiated target. High temperatures can lead to an increase in the grain size of crystalline materials and, as a result, to a degradation of material properties. One of the possible solutions to this problem seems to be a combination of high-intensity implantation of ions with subsequent exposure to the surface of a high-current electron beam. The paper presents the results of studies of the features of changes in the elemental composition and microstructure of titanium alloy during high-intensity implantation of nitrogen, aluminum ions of low and ultra-low energy. The influence of the target temperature regimes on the depth distribution of the implanted dopant and the structure of doped and matrix material is studied. The influence of subsequent modification of the ion-doped layer by the action on the surface of the pulsed high-current electron beams of microsecond duration is studied. The work presents the results of the studying the regularities of changes in the depth distribution of alloying elements, microstructure and phase composition of the modified and matrix layers by optical metallography, x-ray spectral and x-ray structural analysis. | ||
| 330 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 463 | 0 | |0 (RuTPU)RU\TPU\network\34152 |t Energy Fluxes and Radiation Effects (EFRE-2020 online) |o proceedings of 7th International Congress, September 14-26, 2020, Tomsk, Russia |f National Research Tomsk Polytechnic University (TPU) ; Institute of Electrical and Electronics Engineers (IEEE) ; ed. N. A. Ratakhin |v [P. 702-706] |d 2020 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a vacuum arc | |
| 610 | 1 | |a plasma | |
| 610 | 1 | |a high-intensity ion implantation | |
| 610 | 1 | |a дуги | |
| 610 | 1 | |a ионная имплантация | |
| 610 | 1 | |a ионы | |
| 610 | 1 | |a поверхности | |
| 610 | 1 | |a сильноточные электронные пучки | |
| 701 | 1 | |a Ryabchikov |b A. I. |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |c physicist |f 1950- |g Aleksandr Ilyich |3 (RuTPU)RU\TPU\pers\30912 | |
| 701 | 1 | |a Dektyarev |b S. V. |c physicist |c design engineer of Tomsk Polytechnic University |f 1957- |g Sergey Valentinovich |3 (RuTPU)RU\TPU\pers\35672 | |
| 701 | 1 | |a Korneva |b O. S. |c physicist |c engineer of Tomsk Polytechnic University |f 1988- |g Olga Sergeevna |3 (RuTPU)RU\TPU\pers\37178 |9 20156 | |
| 701 | 1 | |a Lopatin |b I. |g Ilia | |
| 701 | 1 | |a Sivin |b D. O. |c physicist |c Senior researcher of Tomsk Polytechnic University, Candidate of technical sciences |f 1978- |g Denis Olegovich |3 (RuTPU)RU\TPU\pers\34240 | |
| 701 | 1 | |a Ivanov |b Yu. F. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1955- |g Yuriy Fedorovich |3 (RuTPU)RU\TPU\pers\33559 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа ядерных технологий |b Научная лаборатория высокоинтенсивной имплантации ионов |3 (RuTPU)RU\TPU\col\23698 |
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| 856 | 4 | |u https://doi.org/10.1109/EFRE47760.2020.9242058 | |
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