Preparation of ultrafine Cu3Si in high-current pulsed arc discharge; Nanotechnologies in Russia; Vol. 11, iss. 9
| Parent link: | Nanotechnologies in Russia.— , 2006- Vol. 11, iss. 9.— 2016.— [P. 548-552] |
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| Institution som forfatter: | |
| Andre forfattere: | , , , |
| Summary: | Title screen The results of experimental research into ultrafine copper silicide production in plasma high-current pulsed arc discharge are shown. According to X-ray diffraction, the product consists primarily of ??-Cu3Si (81%) and contains copper and silicon. A study of the material by transmission electron microscopy reveals the formation of elongated pointed copper silicide crystals with cross-sectional dimensions of approximately 250 nm. The presented method of preparation of copper silicide allow one to obtain grams of the ultrafine product per one operating cycle of the system, the duration of which is about 0.5 ms. The materials prepared may be used in the power industry, for example, for the manufacture of electrode systems of power supplies. Режим доступа: по договору с организацией-держателем ресурса |
| Sprog: | engelsk |
| Udgivet: |
2016
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| Fag: | |
| Online adgang: | http://dx.doi.org/10.1134/S199507801605013X |
| Format: | Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=662720 |
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| 200 | 1 | |a Preparation of ultrafine Cu3Si in high-current pulsed arc discharge |f A. Ya. Pak, K. N. Shatrova, N. E. Aktaev, A. S. Ivashutenko | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 552 (28 tit.)] | ||
| 330 | |a The results of experimental research into ultrafine copper silicide production in plasma high-current pulsed arc discharge are shown. According to X-ray diffraction, the product consists primarily of ??-Cu3Si (81%) and contains copper and silicon. A study of the material by transmission electron microscopy reveals the formation of elongated pointed copper silicide crystals with cross-sectional dimensions of approximately 250 nm. The presented method of preparation of copper silicide allow one to obtain grams of the ultrafine product per one operating cycle of the system, the duration of which is about 0.5 ms. The materials prepared may be used in the power industry, for example, for the manufacture of electrode systems of power supplies. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Nanotechnologies in Russia |d 2006- | ||
| 463 | |t Vol. 11, iss. 9 |v [P. 548-552] |d 2016 | ||
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| 701 | 1 | |a Pak |b A. Ya. |c specialist in the field of electrical engineering |c Professor of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1986- |g Aleksandr Yakovlevich |3 (RuTPU)RU\TPU\pers\34120 |9 17660 | |
| 701 | 1 | |a Shatrova |b K. N. |g Kseniya Nikolaevna | |
| 701 | 1 | |a Aktaev |b N. E. |c physicist |c research engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1985- |g Nurken Erbolatovich |3 (RuTPU)RU\TPU\pers\33514 |9 17182 | |
| 701 | 1 | |a Ivashutenko |b A. S. |c specialist in the field of electrical engineering |c Associate Professor of the Tomsk Polytechnic University, Candidate of technical sciences |f 1981- |g Alexander Sergeevich |3 (RuTPU)RU\TPU\pers\33076 |9 16908 | |
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