Thermal stability of a-C:H:SiOx thin films in hydrogen atmosphere; Thin Solid Films; Vol. 690
| Parent link: | Thin Solid Films Vol. 690.— 2019.— [137531, 8 p.] |
|---|---|
| Corporate Authors: | , |
| Andre forfattere: | , , , |
| Summary: | Title screen a-C:H:SiOx thin films were deposited by the plasma assisted chemical vapor deposition method, using polyphenylmethylsiloxane as a precursor. The thermal stability of a-C:H:SiOx films deposited on stainless steel substrates was investigated after thermal annealing of samples in a hydrogen atmosphere for 4?h at temperatures ranging from 300 to 700?°C. The sample analysis by optical and atomic force microscopy, nanoindentation, glow discharge optical emission spectrometry and Raman spectroscopy is reported here. Characterization of the mechanical properties of films (hardness, modulus, endurance capability, elastic recovery) was accomplished using the nanoindentation method. The investigation revealed that the above mechanical characteristics of a-C:H:SiOx films are very good up to 600?°C in hydrogen compared to un-doped diamond-like coatings. The hardness of the as-deposited a-C:H:SiOx films (11–13?GPa) showed no decrease after annealing at 600?°C. It is shown that the properties of films begin to change after annealing in hydrogen at a temperature of 200?°C more than during annealing in an air atmosphere. It is demonstrated that graphitization of a-C:H:SiOx films in hydrogen occurs at higher temperatures than in air. Режим доступа: по договору с организацией-держателем ресурса |
| Sprog: | engelsk |
| Udgivet: |
2019
|
| Fag: | |
| Online adgang: | https://doi.org/10.1016/j.tsf.2019.137531 |
| Format: | MixedMaterials Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=662580 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 662580 | ||
| 005 | 20250407125546.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\33735 | ||
| 035 | |a RU\TPU\network\32698 | ||
| 090 | |a 662580 | ||
| 100 | |a 20200904d2019 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a NL | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Thermal stability of a-C:H:SiOx thin films in hydrogen atmosphere |f A. S. Grenaderov, A. A. Soloviev (Solovyev), K. V. Oskomov, V. S. Sypchenko | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 42 tit.] | ||
| 330 | |a a-C:H:SiOx thin films were deposited by the plasma assisted chemical vapor deposition method, using polyphenylmethylsiloxane as a precursor. The thermal stability of a-C:H:SiOx films deposited on stainless steel substrates was investigated after thermal annealing of samples in a hydrogen atmosphere for 4?h at temperatures ranging from 300 to 700?°C. The sample analysis by optical and atomic force microscopy, nanoindentation, glow discharge optical emission spectrometry and Raman spectroscopy is reported here. Characterization of the mechanical properties of films (hardness, modulus, endurance capability, elastic recovery) was accomplished using the nanoindentation method. The investigation revealed that the above mechanical characteristics of a-C:H:SiOx films are very good up to 600?°C in hydrogen compared to un-doped diamond-like coatings. The hardness of the as-deposited a-C:H:SiOx films (11–13?GPa) showed no decrease after annealing at 600?°C. It is shown that the properties of films begin to change after annealing in hydrogen at a temperature of 200?°C more than during annealing in an air atmosphere. It is demonstrated that graphitization of a-C:H:SiOx films in hydrogen occurs at higher temperatures than in air. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Thin Solid Films | ||
| 463 | |t Vol. 690 |v [137531, 8 p.] |d 2019 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a a-C:H:SiOx | |
| 610 | 1 | |a thin films | |
| 610 | 1 | |a plasma-enhanced chemical vapor deposition | |
| 610 | 1 | |a thermal stability | |
| 610 | 1 | |a graphitization | |
| 610 | 1 | |a hydrogen absorption | |
| 610 | 1 | |a gas barrier | |
| 610 | 1 | |a raman spectroscopy | |
| 610 | 1 | |a тонкие пленки | |
| 610 | 1 | |a паровые фазы | |
| 610 | 1 | |a термостойкость | |
| 610 | 1 | |a графитизация | |
| 701 | 1 | |a Grenaderov |b A. S. |g Aleksandr Sergeevich | |
| 701 | 1 | |a Soloviev (Solovyev) |b A. A. |c specialist in the field of hydrogen energy |c Associate Professor of Tomsk Polytechnic University, Candidate of technical sciences |f 1977- |g Andrey Aleksandrovich |3 (RuTPU)RU\TPU\pers\30863 |9 15109 | |
| 701 | 1 | |a Oskomov |b K. V. |g Konstantin Vladimirovich | |
| 701 | 1 | |a Sypchenko |b V. S. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of Sciences |f 1987- |g Vladimir Sergeevich |3 (RuTPU)RU\TPU\pers\33791 |9 17389 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа ядерных технологий |b Отделение экспериментальной физики |3 (RuTPU)RU\TPU\col\23549 |9 28346 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа ядерных технологий |b Научно-образовательный центр Б. П. Вейнберга |3 (RuTPU)RU\TPU\col\23561 |9 28358 |
| 801 | 2 | |a RU |b 63413507 |c 20200904 |g RCR | |
| 856 | 4 | |u https://doi.org/10.1016/j.tsf.2019.137531 | |
| 942 | |c CF | ||