Study and production of thin-film memristors based on TiO2 – TiOx layers; IOP Conference Series: Materials Science and Engineering; Vol. 498 : Advanced Micro- and Nanoelectronic Systems and Technologies

Detalhes bibliográficos
Parent link:IOP Conference Series: Materials Science and Engineering
Vol. 498 : Advanced Micro- and Nanoelectronic Systems and Technologies.— 2019.— [012022, 4 p.]
Autor Corporativo: Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Научно-образовательный центр Б. П. Вейнберга
Outros Autores: Zhidik E. V. Ekaterina Vyacheslavovna, Troyan P. E. Pavel Efimovich, Sakharov Yu. V. Yury Vladimirovich, Zhidik Yu. S. Yury Sergeevich, Korzhenko D. V. Dmitry Vladimirovich
Resumo:Title screen
Results of production of thin-film memristor MIM-structures based on the stoichiometric (TiO2) and nonstoichiometric (TiOx) titanium oxides and contacts without precious and rare-earth metals are given. It is shown that such memristor structures without precious metals show its operability only after the process of electrical forming.
Idioma:inglês
Publicado em: 2019
Assuntos:
Acesso em linha:https://doi.org/10.1088/1757-899X/498/1/012022
Formato: Recurso Electrónico Capítulo de Livro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=662537

MARC

LEADER 00000naa0a2200000 4500
001 662537
005 20250812121553.0
035 |a (RuTPU)RU\TPU\network\33692 
035 |a RU\TPU\network\15562 
090 |a 662537 
100 |a 20200831d2019 k||y0engy50 ba 
101 0 |a eng 
102 |a GB 
135 |a drgn ---uucaa 
181 0 |a i  
182 0 |a b 
200 1 |a Study and production of thin-film memristors based on TiO2 – TiOx layers  |f E. V. Zhidik, P. E. Troyan, Yu. V. Sakharov [et al.] 
203 |a Text  |c electronic 
300 |a Title screen 
320 |a [References: 10 tit.] 
330 |a Results of production of thin-film memristor MIM-structures based on the stoichiometric (TiO2) and nonstoichiometric (TiOx) titanium oxides and contacts without precious and rare-earth metals are given. It is shown that such memristor structures without precious metals show its operability only after the process of electrical forming. 
461 0 |0 (RuTPU)RU\TPU\network\2008  |t IOP Conference Series: Materials Science and Engineering 
463 |t Vol. 498 : Advanced Micro- and Nanoelectronic Systems and Technologies  |o 2nd International Telecommunication Conference, 1–2 June 2017, Moscow, Russia  |o [proceedings]  |v [012022, 4 p.]  |d 2019 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a тонкопленочные материалы 
701 1 |a Zhidik  |b E. V.  |g Ekaterina Vyacheslavovna 
701 1 |a Troyan  |b P. E.  |g Pavel Efimovich 
701 1 |a Sakharov  |b Yu. V.  |g Yury Vladimirovich 
701 1 |a Zhidik  |b Yu. S.  |g Yury Sergeevich 
701 1 |a Korzhenko  |b D. V.  |c physicist  |c engineer of Tomsk Polytechnic University  |f 1988-  |g Dmitry Vladimirovich  |3 (RuTPU)RU\TPU\pers\37367 
712 0 2 |a Национальный исследовательский Томский политехнический университет  |b Инженерная школа ядерных технологий  |b Научно-образовательный центр Б. П. Вейнберга  |3 (RuTPU)RU\TPU\col\23561 
801 2 |a RU  |b 63413507  |c 20200831  |g RCR 
856 4 |u https://doi.org/10.1088/1757-899X/498/1/012022 
942 |c CF