Study and production of thin-film memristors based on TiO2 – TiOx layers

Détails bibliographiques
Parent link:	IOP Conference Series: Materials Science and Engineering Vol. 498 : Advanced Micro- and Nanoelectronic Systems and Technologies.— 2019.— [012022, 4 p.]
Collectivité auteur:	Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Научно-образовательный центр Б. П. Вейнберга
Autres auteurs:	Zhidik E. V. Ekaterina Vyacheslavovna, Troyan P. E. Pavel Efimovich, Sakharov Yu. V. Yury Vladimirovich, Zhidik Yu. S. Yury Sergeevich, Korzhenko D. V. Dmitry Vladimirovich
Résumé:	Title screen Results of production of thin-film memristor MIM-structures based on the stoichiometric (TiO2) and nonstoichiometric (TiOx) titanium oxides and contacts without precious and rare-earth metals are given. It is shown that such memristor structures without precious metals show its operability only after the process of electrical forming.
Publié:	2019
Sujets:	электронный ресурс труды учёных ТПУ тонкопленочные материалы
Accès en ligne:	https://doi.org/10.1088/1757-899X/498/1/012022
Format:	Électronique Chapitre de livre
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=662537

Description
Résumé:	Title screen Results of production of thin-film memristor MIM-structures based on the stoichiometric (TiO2) and nonstoichiometric (TiOx) titanium oxides and contacts without precious and rare-earth metals are given. It is shown that such memristor structures without precious metals show its operability only after the process of electrical forming.
DOI:	10.1088/1757-899X/498/1/012022

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