Laser-Associated Selective Metallization of Ceramic Surface with Infrared Nanosecond Laser Technology

Chi tiết về thư mục
Parent link:Advanced Engineering Materials
Vol. 21, iss. 7.— 2019.— [1900096, 6 p.]
Tác giả của công ty: Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Отделение материаловедения
Tác giả khác: Wang Li, Fu Z. Zongwen, Suess-Wolf R. Robert, Greil P. Peter, Travitsky (Travitzky) N. Nakhum, Franke J. Joerg
Tóm tắt:Title screen
A new approach for the metallization of ceramic substrate by Infrared Nanosecond Laser Technology (INLT) is developed in the present work. The activation of ceramic surface by INLT with a wavelength of 1064 nm promotes the chemical electroless copper plating. The laser associated modification of ceramics in terms of laser ablation is also determined. The ablation threshold for the Al2O3-Cu2O ceramic used in this study is identified at 3.82 and 1.86 J cm−2 with respect to single pulse irradiation and multiple pulses irradiation, respectively. The thickness of plated copper layer on the activated ceramic surface is strongly dependent on the laser fluence and can reach the maximum thickness at the fluence nearby the ablation threshold.
Ngôn ngữ:Tiếng Anh
Được phát hành: 2019
Những chủ đề:
Truy cập trực tuyến:https://doi.org/10.1002/adem.201900096
Định dạng: Điện tử Chương của sách
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=662328

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