Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions; Surface and Coatings Technology; Vol. 385

Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions; Surface and Coatings Technology; Vol. 385

Библиографические подробности
Источник:	Surface and Coatings Technology Vol. 385.— 2020.— [125350, 6 p.]
Автор-организация:	Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий"
Другие авторы:	Liang Guoying, Zhong Haowen, Zhang Shijian, Xu Mofei, Kuang Shicheng, Remnev G. E. Gennady Efimovich
Примечания:	Title screen This paper investigates damage generation and evolution nearby silicon surface bombarded by energetic carbon ions by using molecular dynamics simulations. We experimentally measured elementary composition in defect regions based on energy dispersive spectrometer analysis. Using molecular dynamics simulations, point defects generation and evolution in monocrystalline silicon were illustrated. The percentage of carbon in defect regions is significantly more than that in non-irradiated regions of monocrystalline silicon. Point defects rapidly generate at the beginning of collision cascades between projective carbon ions and silicon atoms. The radial straggling and penetration along the depth direction are respectively dominant when projective ions with different kinetic energies implant into silicon target. These results can be used to better understand the interaction between projective energetic ions and target. Режим доступа: по договору с организацией-держателем ресурса
Язык:	английский
Опубликовано:	2020
Предметы:	электронный ресурс труды учёных ТПУ damage point defect molecular dynamics vacancy interstitial atom ущерб дефекты молекулярная динамика
Online-ссылка:	https://doi.org/10.1016/j.surfcoat.2020.125350
Формат:	Электронный ресурс Статья
Запись в KOHA:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=662219

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