Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions; Surface and Coatings Technology; Vol. 385

Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions; Surface and Coatings Technology; Vol. 385

Bibliographic Details
Parent link:Surface and Coatings Technology
Vol. 385.— 2020.— [125350, 6 p.]
Corporate Author: Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Научно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий"
Other Authors: Liang Guoying, Zhong Haowen, Zhang Shijian, Xu Mofei, Kuang Shicheng, Remnev G. E. Gennady Efimovich
Summary:Title screen
This paper investigates damage generation and evolution nearby silicon surface bombarded by energetic carbon ions by using molecular dynamics simulations. We experimentally measured elementary composition in defect regions based on energy dispersive spectrometer analysis. Using molecular dynamics simulations, point defects generation and evolution in monocrystalline silicon were illustrated. The percentage of carbon in defect regions is significantly more than that in non-irradiated regions of monocrystalline silicon. Point defects rapidly generate at the beginning of collision cascades between projective carbon ions and silicon atoms. The radial straggling and penetration along the depth direction are respectively dominant when projective ions with different kinetic energies implant into silicon target. These results can be used to better understand the interaction between projective energetic ions and target.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2020
Subjects:
электронный ресурс
труды учёных ТПУ
damage
point defect
molecular dynamics
vacancy
interstitial atom
ущерб
дефекты
молекулярная динамика
Online Access:https://doi.org/10.1016/j.surfcoat.2020.125350
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=662219

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