Formation of repetitively pulsed high-intensity, low-energy silicon ion beams; Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment; Vol. 953
| Parent link: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Vol. 953.— 2020.— [163092, 9 р.] |
|---|---|
| Korporace: | , |
| Další autoři: | , , , |
| Shrnutí: | Title screen This paper investigates the formation of pulsed and repetitively pulsed high-intensity, low-energy silicon ion beams. The formation of a pulsed silicon plasma was carried out by a vacuum arc discharge. Polycrystalline neutron-doped silicon was used as the evaporator's cathode. A pulsed vacuum arc discharge formed a directed silicon plasma flow with a duration of approximately 350μs. On the path of plasma transportation at a distance of 35 cm from the cathode surface, a system for forming a ballistically focused ion beam was installed. When a pulsed or a repetitively pulsed negative-bias potential is applied to the extracting grid electrode in the shape of a second-order surface, it ensured the formation of a sheath, the extraction of silicon ions from the plasma, and their acceleration in the layer. The shape of the extracting electrode provided the possibility of ballistic focusing of the silicon ion beam. Repetitively pulsed generation of the bias potential provided the possibility of preliminary plasma injection into the beam drift space between the bias-potential pulses. The paper has studied the features and regularities of the pulsed (with a duration of bias pulses up to 34μs) and repetitively pulsed (at frequencies of bias pulses of 20 and 100 kHz) silicon ion beams formation with a current of up to 2 A at a maximum ion current density of 0.8 A/cm2 at bias potentials of small amplitudes (0.6-1.8 kV). Режим доступа: по договору с организацией-держателем ресурса |
| Jazyk: | angličtina |
| Vydáno: |
2020
|
| Témata: | |
| On-line přístup: | https://doi.org/10.1016/j.nima.2019.163092 |
| Médium: | Elektronický zdroj Kapitola |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=662093 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 662093 | ||
| 005 | 20250422141002.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\33227 | ||
| 090 | |a 662093 | ||
| 100 | |a 20200518d2020 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a NL | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Formation of repetitively pulsed high-intensity, low-energy silicon ion beams |f A. I. Ryabchikov, D. O. Sivin, S. V. Dektyarev, A. E. Shevelev | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 40 tit.] | ||
| 330 | |a This paper investigates the formation of pulsed and repetitively pulsed high-intensity, low-energy silicon ion beams. The formation of a pulsed silicon plasma was carried out by a vacuum arc discharge. Polycrystalline neutron-doped silicon was used as the evaporator's cathode. A pulsed vacuum arc discharge formed a directed silicon plasma flow with a duration of approximately 350μs. On the path of plasma transportation at a distance of 35 cm from the cathode surface, a system for forming a ballistically focused ion beam was installed. When a pulsed or a repetitively pulsed negative-bias potential is applied to the extracting grid electrode in the shape of a second-order surface, it ensured the formation of a sheath, the extraction of silicon ions from the plasma, and their acceleration in the layer. The shape of the extracting electrode provided the possibility of ballistic focusing of the silicon ion beam. Repetitively pulsed generation of the bias potential provided the possibility of preliminary plasma injection into the beam drift space between the bias-potential pulses. The paper has studied the features and regularities of the pulsed (with a duration of bias pulses up to 34μs) and repetitively pulsed (at frequencies of bias pulses of 20 and 100 kHz) silicon ion beams formation with a current of up to 2 A at a maximum ion current density of 0.8 A/cm2 at bias potentials of small amplitudes (0.6-1.8 kV). | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | ||
| 463 | |t Vol. 953 |v [163092, 9 р.] |d 2020 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a импульсные пучки | |
| 610 | 1 | |a вакуумно-дуговой разряд | |
| 610 | 1 | |a поликристаллический кремний | |
| 610 | 1 | |a смещения | |
| 701 | 1 | |a Ryabchikov |b A. I. |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |c physicist |f 1950- |g Aleksandr Ilyich |3 (RuTPU)RU\TPU\pers\30912 | |
| 701 | 1 | |a Sivin |b D. O. |c physicist |c Senior researcher of Tomsk Polytechnic University, Candidate of technical sciences |f 1978- |g Denis Olegovich |3 (RuTPU)RU\TPU\pers\34240 | |
| 701 | 1 | |a Dektyarev |b S. V. |c physicist |c design engineer of Tomsk Polytechnic University |f 1957- |g Sergey Valentinovich |3 (RuTPU)RU\TPU\pers\35672 | |
| 701 | 1 | |a Shevelev |b A. E. |c Physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Aleksey Eduardovich |3 (RuTPU)RU\TPU\pers\36832 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа физики высокоэнергетических процессов |c (2017- ) |3 (RuTPU)RU\TPU\col\23551 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа ядерных технологий |b Научная лаборатория высокоинтенсивной имплантации ионов |3 (RuTPU)RU\TPU\col\23698 |
| 801 | 2 | |a RU |b 63413507 |c 20200518 |g RCR | |
| 850 | |a 63413507 | ||
| 856 | 4 | |u https://doi.org/10.1016/j.nima.2019.163092 | |
| 942 | |c CF | ||