Laser monitor for imaging single crystal diamond growth in H2-CH4 microwave plasma
| Parent link: | Optics and Laser Technology Vol. 120.— 2019.— [105716, 4 p.] |
|---|---|
| Corporate Authors: | , |
| Other Authors: | , , , , , , , , , |
| Summary: | Title screen We used an active optical system referred to as ‘laser monitor’ based on a copper bromide vapor brightness amplifier for imaging a diamond crystal surface during its synthesis in a microwave plasma in CH4-H2 gas mixture. The approach allows observation of an entire crystal without interrupting the chemical vapor deposition process. It is demonstrated that the broadband plasma background radiation with the brightness temperature of about 3000?K does not interfere with object real-time monitoring at the laser wavelength of 510.6?nm. High quality images obtained using both passive (laser illumination) and active (laser monitor) methods provide information about the surface relief of the growing crystal with resolution of a few tens of micrometer. Each frame is formed through one pulse (about 30?ns), with the maximum frame rate being 20,000 frames/sec. Режим доступа: по договору с организацией-держателем ресурса |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | https://doi.org/10.1016/j.optlastec.2019.105716 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=662021 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 662021 | ||
| 005 | 20250421152943.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\33154 | ||
| 090 | |a 662021 | ||
| 100 | |a 20200429d2019 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a NL | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Laser monitor for imaging single crystal diamond growth in H2-CH4 microwave plasma |f G. S. Evtushenko, S. N. Torgaev, M. V. Trigub [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 21 tit.] | ||
| 330 | |a We used an active optical system referred to as ‘laser monitor’ based on a copper bromide vapor brightness amplifier for imaging a diamond crystal surface during its synthesis in a microwave plasma in CH4-H2 gas mixture. The approach allows observation of an entire crystal without interrupting the chemical vapor deposition process. It is demonstrated that the broadband plasma background radiation with the brightness temperature of about 3000?K does not interfere with object real-time monitoring at the laser wavelength of 510.6?nm. High quality images obtained using both passive (laser illumination) and active (laser monitor) methods provide information about the surface relief of the growing crystal with resolution of a few tens of micrometer. Each frame is formed through one pulse (about 30?ns), with the maximum frame rate being 20,000 frames/sec. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Optics and Laser Technology | ||
| 463 | |t Vol. 120 |v [105716, 4 p.] |d 2019 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a active optical system | |
| 610 | 1 | |a laser monitor | |
| 610 | 1 | |a copper bromide brightness amplifier | |
| 610 | 1 | |a diamond | |
| 610 | 1 | |a microwave plasma | |
| 610 | 1 | |a surface imaging | |
| 610 | 1 | |a оптические системы | |
| 610 | 1 | |a лазерные мониторы | |
| 610 | 1 | |a лазерное излучение | |
| 610 | 1 | |a микроволновая плазма | |
| 610 | 1 | |a поверхностные излучения | |
| 701 | 1 | |a Evtushenko |b G. S. |c Doctor of Technical Sciences, Professor of Tomsk Polytechnic University (TPU) |c Russian specialist in electrophysics |f 1947- |g Gennady Sergeevich |3 (RuTPU)RU\TPU\pers\29009 |9 13729 | |
| 701 | 1 | |a Torgaev |b S. N. |c specialist in the field of electronics |c associate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences |f 1984- |g Stanislav Nikolaevich |3 (RuTPU)RU\TPU\pers\31663 |9 15800 | |
| 701 | 1 | |a Trigub |b M. V. |c specialist in the field of non-destructive testing |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1987- |g Maksim Viktorovich |3 (RuTPU)RU\TPU\pers\31242 |9 15437 | |
| 701 | 1 | |a Shiyanov |b D. V. |c specialist in the field of electronics |c Engineer of Tomsk Polytechnic University |f 1973- |g Dmitry Valeryevich |3 (RuTPU)RU\TPU\pers\31659 | |
| 701 | 1 | |a Bushuev |b E. V. |g Egor | |
| 701 | 1 | |a Bolshakov |b A. P. |g Andrey | |
| 701 | 1 | |a Zemskov |b K. I. | |
| 701 | 1 | |a Savransky |b V. V. |g Valery | |
| 701 | 1 | |a Ralchenko |b V. G. |g Viktor | |
| 701 | 1 | |a Konov |b V. I. |g Vitaly | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа неразрушающего контроля и безопасности |b Отделение электронной инженерии |3 (RuTPU)RU\TPU\col\23507 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа новых производственных технологий |b Отделение материаловедения |3 (RuTPU)RU\TPU\col\23508 |
| 801 | 2 | |a RU |b 63413507 |c 20200429 |g RCR | |
| 850 | |a 63413507 | ||
| 856 | 4 | |u https://doi.org/10.1016/j.optlastec.2019.105716 | |
| 942 | |c CF | ||