Cubic SiC nanowire synthesis by DC arc discharge under ambient air conditions; Surface and Coatings Technology; Vol. 387
| Parent link: | Surface and Coatings Technology Vol. 387.— 2020.— [125554, 7 p.] |
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| Erakunde egilea: | |
| Beste egile batzuk: | , , , |
| Gaia: | Title screen Silicon carbide (SiC) is a widely used material characterized by unique physical and chemical properties. In the paper, cubic silicon carbide nanowires are synthesized via the non-vacuum DC (direct current) arc discharge method. DC arc is generated between the graphite rod and the graphite crucible under ambient air conditions without any vacuum or applying special defenses to the used atmosphere equipment. According to experimental data, the percentage of silicon carbide of the total product in interval from 70 A to 100 A increases from 3.9% up to 26.7% (mass), and in interval from 130 A to 200 A of arc discharge current decreases from 26.1% down to 19.9% (mass). The silicon carbide wires are characterized by the typical core-shell SiC-SiOx structure. It is possible to control the phase composition and increase the yield of SiC by changing the arc discharge current amplitude. The optimal synthesis parameters using the DC source with the maximum current of 200 A are a current of 200 A, synthesis time of 12 s and a silicon fraction in the initial mixture not more than 25% (mass) to completely process the initial silicon into its carbide. Режим доступа: по договору с организацией-держателем ресурса |
| Hizkuntza: | ingelesa |
| Argitaratua: |
2020
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| Gaiak: | |
| Sarrera elektronikoa: | https://doi.org/10.1016/j.surfcoat.2020.125554 |
| Formatua: | Baliabide elektronikoa Liburu kapitulua |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=661952 |
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| 200 | 1 | |a Cubic SiC nanowire synthesis by DC arc discharge under ambient air conditions |f A. Ya. Pak, A. S. Ivashutenko, A. A. Zakharova, Yu. Z. Vasiljeva | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 37 tit.] | ||
| 330 | |a Silicon carbide (SiC) is a widely used material characterized by unique physical and chemical properties. In the paper, cubic silicon carbide nanowires are synthesized via the non-vacuum DC (direct current) arc discharge method. DC arc is generated between the graphite rod and the graphite crucible under ambient air conditions without any vacuum or applying special defenses to the used atmosphere equipment. According to experimental data, the percentage of silicon carbide of the total product in interval from 70 A to 100 A increases from 3.9% up to 26.7% (mass), and in interval from 130 A to 200 A of arc discharge current decreases from 26.1% down to 19.9% (mass). The silicon carbide wires are characterized by the typical core-shell SiC-SiOx structure. It is possible to control the phase composition and increase the yield of SiC by changing the arc discharge current amplitude. The optimal synthesis parameters using the DC source with the maximum current of 200 A are a current of 200 A, synthesis time of 12 s and a silicon fraction in the initial mixture not more than 25% (mass) to completely process the initial silicon into its carbide. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Surface and Coatings Technology | ||
| 463 | |t Vol. 387 |v [125554, 7 p.] |d 2020 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a DC Arc discharge | |
| 610 | 1 | |a synthesis | |
| 610 | 1 | |a silicon carbide | |
| 610 | 1 | |a nanowire | |
| 610 | 1 | |a ambient air conditions | |
| 610 | 1 | |a дуговые разряды | |
| 610 | 1 | |a постоянный ток | |
| 610 | 1 | |a синтез | |
| 610 | 1 | |a карбид кремния | |
| 610 | 1 | |a окружающая среда | |
| 701 | 1 | |a Pak |b A. Ya. |c specialist in the field of electrical engineering |c Professor of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1986- |g Aleksandr Yakovlevich |3 (RuTPU)RU\TPU\pers\34120 |9 17660 | |
| 701 | 1 | |a Ivashutenko |b A. S. |c specialist in the field of electrical engineering |c Associate Professor of the Tomsk Polytechnic University, Candidate of technical sciences |f 1981- |g Alexander Sergeevich |3 (RuTPU)RU\TPU\pers\33076 |9 16908 | |
| 701 | 1 | |a Zakharova |b A. A. |c specialist in the field of informatics and computer engineering |c Professor of Yurga technological Institute of Tomsk Polytechnic University, Doctor of sciences |f 1976- |g Aleksandra Aleksandrovna |3 (RuTPU)RU\TPU\pers\34678 |9 18028 | |
| 701 | 1 | |a Vasiljeva (Vassilyeva) |b Yu. Z. |c specialist in the field of electric power engineering |c Researcher, Associate Professor of Tomsk Polytechnic University, Candidate of Technical Sciences |f 1995- |g Yuliya Zakharovna |3 (RuTPU)RU\TPU\pers\46740 |9 22376 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа энергетики |b Отделение электроэнергетики и электротехники (ОЭЭ) |3 (RuTPU)RU\TPU\col\23505 |
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| 856 | 4 | |u https://doi.org/10.1016/j.surfcoat.2020.125554 | |
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