Revealing misfit dislocations in InAs x P1−x -InP core-shell nanowires by x-ray diffraction; Nanotechnology; Vol. 30, iss. 50

מידע ביבליוגרפי
Parent link:Nanotechnology
Vol. 30, iss. 50.— 2019.— [505703, 11 р.]
מחבר תאגידי: Национальный исследовательский Томский политехнический университет Институт неразрушающего контроля Международная научно-образовательная лаборатория неразрушающего контроля
מחברים אחרים: Lazarev S. V. Sergey Vladimirovich, Goransson D. J. O. David, Borgstrom M. T. Magnus, Messing M. E. Maria, Xu Hongqi, Dzhigaev D. Dmitry, Yefanov O. M. Oleksandr, Bauer S. Sondes, Baumbach T. Tilo, Feidenhans'L R. Robert, Samuelson L. Lars, Vartanyants I. A. Ivan
סיכום:Title screen
InAs x P1−x nanowires are promising building blocks for future optoelectronic devices and nanoelectronics. Their structure may vary from nanowire to nanowire, which may influence their average optoelectronic properties. Therefore, it is highly important for their applications to know the average properties of an ensemble of the nanowires. Structural properties of the InAs x P1−x -InP core-shell nanowires were investigated using the coplanar x-ray diffraction performed at a synchrotron facility. Studies of series of symmetric and asymmetric x-ray Bragg reflections allowed us to determine the 26% ± 3% of As chemical composition in the InAs x P1−x core, core-shell relaxation, and the average tilt of the nanowires with respect to the substrate normal. Based on the x-ray diffraction, scanning, and transmission electron microscopy measurements, a model of the core-shell relaxation was proposed. Partial relaxation of the core was attributed to misfit dislocations formed at the core-shell interface and their linear density was estimated to be 3.3 ± 0.3 × 104 cm−1.
שפה:אנגלית
יצא לאור: 2019
נושאים:
גישה מקוונת:https://doi.org/10.1088/1361-6528/ab40f1
פורמט: MixedMaterials אלקטרוני Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=661615

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330 |a InAs x P1−x nanowires are promising building blocks for future optoelectronic devices and nanoelectronics. Their structure may vary from nanowire to nanowire, which may influence their average optoelectronic properties. Therefore, it is highly important for their applications to know the average properties of an ensemble of the nanowires. Structural properties of the InAs x P1−x -InP core-shell nanowires were investigated using the coplanar x-ray diffraction performed at a synchrotron facility. Studies of series of symmetric and asymmetric x-ray Bragg reflections allowed us to determine the 26% ± 3% of As chemical composition in the InAs x P1−x core, core-shell relaxation, and the average tilt of the nanowires with respect to the substrate normal. Based on the x-ray diffraction, scanning, and transmission electron microscopy measurements, a model of the core-shell relaxation was proposed. Partial relaxation of the core was attributed to misfit dislocations formed at the core-shell interface and their linear density was estimated to be 3.3 ± 0.3 × 104 cm−1. 
461 |t Nanotechnology 
463 |t Vol. 30, iss. 50  |v [505703, 11 р.]  |d 2019 
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