High Intensity low Aluminum Ion Energy Implantation into Titanium; Ion Implantation Technology (IIT 2018)
| Parent link: | Ion Implantation Technology (IIT 2018).— 2018.— [P. 364-367] |
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| Kurumsal yazarlar: | , , , |
| Diğer Yazarlar: | , , , , , |
| Özet: | Title screen This study describes the possibility of ultra-high dose aluminum ion implantation for surface modification of titanium. The DC vacuum arc source was used to produce dense metal plasma. Plasma immersion aluminum ions extraction and their ballistic focusing in equipotential space of negatively biased hemispherical electrode was used to obtain high intensity aluminum ion beam with the maximum amplitude of 1 A at the ion current density up to hundreds of mA/cm 2 . The original filtration system was used to prevent the deposition of vacuum arc aluminum macroparticles onto the irradiation area of titanium sample. Aluminum low energy ions (ion energy E <; 10 keV) were implanted into titanium with the doses reaching 10 21 ion/cm 2 . The effect of ion current density, implantation dose and substrate temperature on the phase composition, microstructure and distribution of elements was studied by X-ray diffraction, scanning electron microscopy and glow-discharge optical emission spectroscopy, respectively. The results show the appearance of Ti 3 Al intermetallic phase after Al implantation. The depth of aluminum penetration into titanium increases with the implantation dose and multiply exceeds the projected ranges of ions of given energies. Режим доступа: по договору с организацией-держателем ресурса |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
2018
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| Konular: | |
| Online Erişim: | https://doi.org/10.1109/IIT.2018.8807970 |
| Materyal Türü: | Elektronik Kitap Bölümü |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=661349 |
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| 200 | 1 | |a High Intensity low Aluminum Ion Energy Implantation into Titanium |f A. I. Ryabchikov [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 11 tit.] | ||
| 330 | |a This study describes the possibility of ultra-high dose aluminum ion implantation for surface modification of titanium. The DC vacuum arc source was used to produce dense metal plasma. Plasma immersion aluminum ions extraction and their ballistic focusing in equipotential space of negatively biased hemispherical electrode was used to obtain high intensity aluminum ion beam with the maximum amplitude of 1 A at the ion current density up to hundreds of mA/cm 2 . The original filtration system was used to prevent the deposition of vacuum arc aluminum macroparticles onto the irradiation area of titanium sample. Aluminum low energy ions (ion energy E <; 10 keV) were implanted into titanium with the doses reaching 10 21 ion/cm 2 . The effect of ion current density, implantation dose and substrate temperature on the phase composition, microstructure and distribution of elements was studied by X-ray diffraction, scanning electron microscopy and glow-discharge optical emission spectroscopy, respectively. The results show the appearance of Ti 3 Al intermetallic phase after Al implantation. The depth of aluminum penetration into titanium increases with the implantation dose and multiply exceeds the projected ranges of ions of given energies. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 463 | |t Ion Implantation Technology (IIT 2018) |o Proceedings 22nd International Conference, 16-21, 2018 Congress Centrum, Würzburg, Germany |v [P. 364-367] |d 2018 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a high intensity implantation | |
| 610 | 1 | |a low energy ions | |
| 610 | 1 | |a aluminum | |
| 610 | 1 | |a intermetallic phases | |
| 610 | 1 | |a имплантация | |
| 610 | 1 | |a высокая эффективность | |
| 610 | 1 | |a низкоэнергетические ионы | |
| 610 | 1 | |a алюминий | |
| 610 | 1 | |a интерметаллические фазы | |
| 701 | 1 | |a Ryabchikov |b A. I. |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |c physicist |f 1950- |g Aleksandr Ilyich |3 (RuTPU)RU\TPU\pers\30912 | |
| 701 | 1 | |a Shevelev |b A. E. |c Physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Aleksey Eduardovich |3 (RuTPU)RU\TPU\pers\36832 | |
| 701 | 1 | |a Sivin |b D. O. |c physicist |c Senior researcher of Tomsk Polytechnic University, Candidate of technical sciences |f 1978- |g Denis Olegovich |3 (RuTPU)RU\TPU\pers\34240 | |
| 701 | 1 | |a Kashkarov |b E. B. |c Physicist |c Associate Professor, Researcher of Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences |f 1991- |g Egor Borisovich |3 (RuTPU)RU\TPU\pers\34949 |9 18267 | |
| 701 | 1 | |a Bozhko |b I. A. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1980- |g Irina Aleksandrovna |3 (RuTPU)RU\TPU\pers\34206 |9 17740 | |
| 701 | 1 | |a Stepanov |b I. B. |c physicist |c Head of the laboratory of Tomsk Polytechnic University, Doctor of technical sciences |f 1968- |g Igor Borisovich |3 (RuTPU)RU\TPU\pers\34218 | |
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| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Управление проректора по научной работе и инновациям |b Центр сопровождения сетевых проектов |3 (RuTPU)RU\TPU\col\21396 |
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