ALD-Developed Plasmonic Two-Dimensional Au–WO3–TiO2 Heterojunction Architectonics for Design of Photovoltaic Devices; ACS Applied Materials and Interfaces; Vol. 10, iss. 12

מידע ביבליוגרפי
Parent link:ACS Applied Materials and Interfaces
Vol. 10, iss. 12.— 2018.— [P. 10304-10314]
מחבר תאגידי: Национальный исследовательский Томский политехнический университет Исследовательская школа химических и биомедицинских технологий
מחברים אחרים: Akbari M. K. Mohammad Karbalaei, Hai Zh. Zhenyin, Wei Zh. Zihan, Detavernier Ch. Christophe, Solano E. Eduardo, Verpoort F. V. K. Frensis Valter Kornelius, Zhuiykov S. Serge
סיכום:Title screen
Electrically responsive plasmonic devices, which benefit from the privilege of surface plasmon excited hot carries, have supported fascinating applications in the visible-light-assisted technologies. The properties of plasmonic devices can be tuned by controlling charge transfer. It can be attained by intentional architecturing of the metal-semiconductor (MS) interfaces. In this study, the wafer-scaled fabrication of two-dimensional (2D) TiO2 semiconductors on the granular Au metal substrate is achieved using the atomic layer deposition (ALD) technique. The ALD-developed 2D MS heterojunctions exhibited substantial enhancement of the photoresponsivity and demonstrated the improvement of response time for 2D Au-TiO2-based plasmonic devices under visible light illumination. To circumvent the undesired dark current in the plasmonic devices, a 2D WO3 nanofilm (∼0.7 nm) was employed as the intermediate layer on the MS interface to develop the metal-insulator-semiconductor (MIS) 2D heterostructure. As a result, 13.4% improvement of the external quantum efficiency was obtained for fabricated 2D Au-WO3-TiO2 heterojunctions. The impedancometry measurements confirmed the modulation of charge transfer at the 2D MS interface using MIS architectonics. Broadband photoresponsivity from the UV to the visible light region was observed for Au-TiO2 and Au-WO3-TiO2 heterostructures, whereas near-infrared responsivity was not observed. Consequently, considering the versatile nature of the ALD technique, this approach can facilitate the architecturing and design of novel 2D MS and MIS heterojunctions for efficient plasmonic devices.
Режим доступа: по договору с организацией-держателем ресурса
שפה:אנגלית
יצא לאור: 2018
נושאים:
גישה מקוונת:https://doi.org/10.1021/acsami.7b17508
פורמט: אלקטרוני Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=661332

MARC

LEADER 00000naa0a2200000 4500
001 661332
005 20250414155741.0
035 |a (RuTPU)RU\TPU\network\31673 
035 |a RU\TPU\network\29950 
090 |a 661332 
100 |a 20191202d2018 k||y0rusy50 ba 
101 0 |a eng 
102 |a US 
135 |a drcn ---uucaa 
181 0 |a i  
182 0 |a b 
200 1 |a ALD-Developed Plasmonic Two-Dimensional Au–WO3–TiO2 Heterojunction Architectonics for Design of Photovoltaic Devices  |f M. K. Akbari [et al.] 
203 |a Text  |c electronic 
300 |a Title screen 
330 |a Electrically responsive plasmonic devices, which benefit from the privilege of surface plasmon excited hot carries, have supported fascinating applications in the visible-light-assisted technologies. The properties of plasmonic devices can be tuned by controlling charge transfer. It can be attained by intentional architecturing of the metal-semiconductor (MS) interfaces. In this study, the wafer-scaled fabrication of two-dimensional (2D) TiO2 semiconductors on the granular Au metal substrate is achieved using the atomic layer deposition (ALD) technique. The ALD-developed 2D MS heterojunctions exhibited substantial enhancement of the photoresponsivity and demonstrated the improvement of response time for 2D Au-TiO2-based plasmonic devices under visible light illumination. To circumvent the undesired dark current in the plasmonic devices, a 2D WO3 nanofilm (∼0.7 nm) was employed as the intermediate layer on the MS interface to develop the metal-insulator-semiconductor (MIS) 2D heterostructure. As a result, 13.4% improvement of the external quantum efficiency was obtained for fabricated 2D Au-WO3-TiO2 heterojunctions. The impedancometry measurements confirmed the modulation of charge transfer at the 2D MS interface using MIS architectonics. Broadband photoresponsivity from the UV to the visible light region was observed for Au-TiO2 and Au-WO3-TiO2 heterostructures, whereas near-infrared responsivity was not observed. Consequently, considering the versatile nature of the ALD technique, this approach can facilitate the architecturing and design of novel 2D MS and MIS heterojunctions for efficient plasmonic devices. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t ACS Applied Materials and Interfaces 
463 |t Vol. 10, iss. 12  |v [P. 10304-10314]  |d 2018 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a plasmonic devices 
610 1 |a metal-insulator-semiconductor 
610 1 |a interface manipulation 
610 1 |a two-dimensional oxides 
610 1 |a atomic layer deposition 
610 1 |a плазмонные частицы 
610 1 |a металл-диэлектрик-полупроводник 
610 1 |a двумерные объекты 
610 1 |a осаждение 
610 1 |a атомные слои 
701 1 |a Akbari  |b M. K.  |g Mohammad Karbalaei 
701 1 |a Hai  |b Zh.  |g Zhenyin 
701 1 |a Wei  |b Zh.  |g Zihan 
701 1 |a Detavernier  |b Ch.  |g Christophe 
701 1 |a Solano  |b E.  |g Eduardo 
701 1 |a Verpoort  |b F. V. K.  |c Chemical Engineer  |c Professor of Tomsk Polytechnic University, doctor of chemical Sciences  |f 1963-  |g Frensis Valter Kornelius  |3 (RuTPU)RU\TPU\pers\35059  |9 18334 
701 1 |a Zhuiykov  |b S.  |g Serge 
712 0 2 |a Национальный исследовательский Томский политехнический университет  |b Исследовательская школа химических и биомедицинских технологий  |c (2017- )  |3 (RuTPU)RU\TPU\col\23537 
801 2 |a RU  |b 63413507  |c 20191202  |g RCR 
850 |a 63413507 
856 4 |u https://doi.org/10.1021/acsami.7b17508 
942 |c CF