Effect of deposition conditions on optical properties of a-C:H:SiOx films prepared by plasma-assisted chemical vapor deposition method; Optik; Vol. 172

Effect of deposition conditions on optical properties of a-C:H:SiOx films prepared by plasma-assisted chemical vapor deposition method; Optik; Vol. 172

Λεπτομέρειες βιβλιογραφικής εγγραφής
Parent link:Optik
Vol. 172.— 2018.— [P. 107-116]
Κύριος συγγραφέας: Grenadyorov A. S. Aleksandr Sergeevich
Συγγραφή απο Οργανισμό/Αρχή: Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Научно-образовательный центр Б. П. Вейнберга
Άλλοι συγγραφείς: Oskomov K. V. Konstantin Vladimirovich, Soloviev A. A. Andrey Aleksandrovich
Περίληψη:Title screen
The a-C:H:SiOx films were deposited on glass substrates by plasma-assisted chemical vapor deposition from mixtures of argon and polyphenylmethylsiloxane vapor. Optical properties of a-C:H:SiOx films were investigated by varying deposition parameters, such as Ar pressure and amplitude of negative pulse of bipolar substrate bias. Optical properties were determined using the transmission spectra T(λ), measured in the spectral range 300-800 nm. It was shown that the integrated transmittance of a-C:H:SiOx films in the visible wavelength range 380-780 nm is 69-89%, depending on the deposition conditions. On the basis of the transmission spectra Tauc optical band gap, wavelength of absorption edge and Urbach energy were calculated. The resulting films exhibit a wide range of properties including hydrogen content from 35% to 39%, optical band gap from 2.3 to 2.6 eV, wavelength of absorption edge from 477 to 537 nm and Urbach energy from 547 to 718 meV. The change in optical properties of a-C:H:SiOx films is associated with a decrease in the size and concentration of graphite-like clusters in the films as a result of the enhancement of ion bombardment of a growing film with increasing of argon pressure and amplitude of negative pulse of bipolar substrate bias. The study of the optical properties of a-C:H:SiOx films showed that they can be used as protective and antireflection films on optical instruments, in particular, on solar cells.
Режим доступа: по договору с организацией-держателем ресурса
Γλώσσα:Αγγλικά
Έκδοση: 2018
Θέματα:
электронный ресурс
труды учёных ТПУ
substrate bias
ar pressure
transmission
optical band gap
urbach energy
Διαθέσιμο Online:https://doi.org/10.1016/j.ijleo.2018.07.024
Μορφή: Ηλεκτρονική πηγή Κεφάλαιο βιβλίου
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=661222

Παρόμοια τεκμήρια

Παρόμοια τεκμήρια