Effect of deposition conditions on optical properties of a-C:H:SiOx films prepared by plasma-assisted chemical vapor deposition method; Optik; Vol. 172

Dades bibliogràfiques
Parent link:Optik
Vol. 172.— 2018.— [P. 107-116]
Autor principal: Grenadyorov A. S. Aleksandr Sergeevich
Autor corporatiu: Национальный исследовательский Томский политехнический университет Инженерная школа ядерных технологий Научно-образовательный центр Б. П. Вейнберга
Altres autors: Oskomov K. V. Konstantin Vladimirovich, Soloviev A. A. Andrey Aleksandrovich
Sumari:Title screen
The a-C:H:SiOx films were deposited on glass substrates by plasma-assisted chemical vapor deposition from mixtures of argon and polyphenylmethylsiloxane vapor. Optical properties of a-C:H:SiOx films were investigated by varying deposition parameters, such as Ar pressure and amplitude of negative pulse of bipolar substrate bias. Optical properties were determined using the transmission spectra T(λ), measured in the spectral range 300-800 nm. It was shown that the integrated transmittance of a-C:H:SiOx films in the visible wavelength range 380-780 nm is 69-89%, depending on the deposition conditions. On the basis of the transmission spectra Tauc optical band gap, wavelength of absorption edge and Urbach energy were calculated. The resulting films exhibit a wide range of properties including hydrogen content from 35% to 39%, optical band gap from 2.3 to 2.6 eV, wavelength of absorption edge from 477 to 537 nm and Urbach energy from 547 to 718 meV. The change in optical properties of a-C:H:SiOx films is associated with a decrease in the size and concentration of graphite-like clusters in the films as a result of the enhancement of ion bombardment of a growing film with increasing of argon pressure and amplitude of negative pulse of bipolar substrate bias. The study of the optical properties of a-C:H:SiOx films showed that they can be used as protective and antireflection films on optical instruments, in particular, on solar cells.
Режим доступа: по договору с организацией-держателем ресурса
Idioma:anglès
Publicat: 2018
Matèries:
Accés en línia:https://doi.org/10.1016/j.ijleo.2018.07.024
Format: MixedMaterials Electrònic Capítol de llibre
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=661222

MARC

LEADER 00000naa0a2200000 4500
001 661222
005 20250414140850.0
035 |a (RuTPU)RU\TPU\network\31486 
035 |a RU\TPU\network\26455 
090 |a 661222 
100 |a 20191125d2018 k||y0rusy50 ba 
101 0 |a eng 
135 |a drcn ---uucaa 
181 0 |a i  
182 0 |a b 
200 1 |a Effect of deposition conditions on optical properties of a-C:H:SiOx films prepared by plasma-assisted chemical vapor deposition method  |f A. S. Grenadyorov, K. V. Oskomov, A. A. Soloviev 
203 |a Text  |c electronic 
300 |a Title screen 
320 |a [References: 44 tit.] 
330 |a The a-C:H:SiOx films were deposited on glass substrates by plasma-assisted chemical vapor deposition from mixtures of argon and polyphenylmethylsiloxane vapor. Optical properties of a-C:H:SiOx films were investigated by varying deposition parameters, such as Ar pressure and amplitude of negative pulse of bipolar substrate bias. Optical properties were determined using the transmission spectra T(λ), measured in the spectral range 300-800 nm. It was shown that the integrated transmittance of a-C:H:SiOx films in the visible wavelength range 380-780 nm is 69-89%, depending on the deposition conditions. On the basis of the transmission spectra Tauc optical band gap, wavelength of absorption edge and Urbach energy were calculated. The resulting films exhibit a wide range of properties including hydrogen content from 35% to 39%, optical band gap from 2.3 to 2.6 eV, wavelength of absorption edge from 477 to 537 nm and Urbach energy from 547 to 718 meV. The change in optical properties of a-C:H:SiOx films is associated with a decrease in the size and concentration of graphite-like clusters in the films as a result of the enhancement of ion bombardment of a growing film with increasing of argon pressure and amplitude of negative pulse of bipolar substrate bias. The study of the optical properties of a-C:H:SiOx films showed that they can be used as protective and antireflection films on optical instruments, in particular, on solar cells. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Optik 
463 |t Vol. 172  |v [P. 107-116]  |d 2018 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a substrate bias 
610 1 |a ar pressure 
610 1 |a transmission 
610 1 |a optical band gap 
610 1 |a urbach energy 
700 1 |a Grenadyorov  |b A. S.  |g Aleksandr Sergeevich 
701 1 |a Oskomov  |b K. V.  |g Konstantin Vladimirovich 
701 1 |a Soloviev  |b A. A.  |c specialist in the field of hydrogen energy  |c Associate Professor of Tomsk Polytechnic University, Candidate of technical sciences  |f 1977-  |g Andrey Aleksandrovich  |3 (RuTPU)RU\TPU\pers\30863 
712 0 2 |a Национальный исследовательский Томский политехнический университет  |b Инженерная школа ядерных технологий  |b Научно-образовательный центр Б. П. Вейнберга  |3 (RuTPU)RU\TPU\col\23561 
801 2 |a RU  |b 63413507  |c 20191125  |g RCR 
850 |a 63413507 
856 4 |u https://doi.org/10.1016/j.ijleo.2018.07.024 
942 |c CF