Intracenter processes induced by electron beam and 337 nm laser light in CsI:Tl; Functional Materials; Vol. 26, № 3
| Parent link: | Functional Materials Vol. 26, № 3.— 2019.— [P. 454-461] |
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| Tác giả của công ty: | |
| Tác giả khác: | , , , , , , |
| Tóm tắt: | Title screen Investigated are the spectral-kinetic properties of the activator luminescence excited in CsI:Tl crystal by a pulsed electron beam and by a pulsed nitrogen laser at λ = 337.1 nm, that corresponds to the long-wave decline of the A-absorption band. It is found that the decay kinetics of 2.6 and 2.25 eV luminescence bands excited by an electron beam at 80 K is mono-exponential with the time constants τ = 4 μs and τ = 13 μs, respectively. The decay kinetics of each from the luminescence bands under the laser excitation is bi-exponential due to the presence of one more component with time constant τ = 900 ns. This sub-microsecond component dominates in the bi-exponential kinetics, and the value of its time constant is determined by the time of the electron transfer from the metastable ψ sub-level of the excited 62P3/2 state to the ground 62P1/2 state of Tl0 center. Phonon-assisted processes causing population of the radiative states of Tl+ centers responsible for 3.0, 2.25 and 2.6 eV luminescence bands are discussed in detail. |
| Ngôn ngữ: | Tiếng Anh |
| Được phát hành: |
2019
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| Những chủ đề: | |
| Truy cập trực tuyến: | https://doi.org/10.15407/fm26.03.454 |
| Định dạng: | Điện tử Chương của sách |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=661191 |
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| 200 | 1 | |a Intracenter processes induced by electron beam and 337 nm laser light in CsI:Tl |f V. Yu. Yakovlev [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 24 tit.] | ||
| 330 | |a Investigated are the spectral-kinetic properties of the activator luminescence excited in CsI:Tl crystal by a pulsed electron beam and by a pulsed nitrogen laser at λ = 337.1 nm, that corresponds to the long-wave decline of the A-absorption band. It is found that the decay kinetics of 2.6 and 2.25 eV luminescence bands excited by an electron beam at 80 K is mono-exponential with the time constants τ = 4 μs and τ = 13 μs, respectively. The decay kinetics of each from the luminescence bands under the laser excitation is bi-exponential due to the presence of one more component with time constant τ = 900 ns. This sub-microsecond component dominates in the bi-exponential kinetics, and the value of its time constant is determined by the time of the electron transfer from the metastable ψ sub-level of the excited 62P3/2 state to the ground 62P1/2 state of Tl0 center. Phonon-assisted processes causing population of the radiative states of Tl+ centers responsible for 3.0, 2.25 and 2.6 eV luminescence bands are discussed in detail. | ||
| 461 | |t Functional Materials | ||
| 463 | |t Vol. 26, № 3 |v [P. 454-461] |d 2019 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a thallium doped cesium iodide | |
| 610 | 1 | |a luminescence | |
| 610 | 1 | |a Tl<sup>+</sup>-perturbed exciton | |
| 610 | 1 | |a decay kinetics | |
| 610 | 1 | |a charge transfer | |
| 610 | 1 | |a легированные соединения | |
| 610 | 1 | |a люминесценция | |
| 701 | 1 | |a Yakovlev |b V. Yu. |c specialist in the field of lightning engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1949- |g Viktor Yurjevich |3 (RuTPU)RU\TPU\pers\35728 |9 18886 | |
| 701 | 1 | |a Trefilova |b L. N. |g Larisa Nikolaevna | |
| 701 | 1 | |a Alekseev |b V. A. |g Vadim Aleksandrovich | |
| 701 | 1 | |a Karnaukhova |b A. A. |c specialist in the field of lightning engineering |c Assistant, Associate Professor of Tomsk Polytechnic University |f 1983- |g Anna Alekseevna |3 (RuTPU)RU\TPU\pers\37830 |9 20534 | |
| 701 | 1 | |a Shpilinskaya |b O. V. |g Olga Viktorovna | |
| 701 | 1 | |a Lebedinsky |b A. M. |g Aleksey Mikhaylovich | |
| 701 | 1 | |a Tarakhno |b O. |g Aleksey Mikhaylovich | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа новых производственных технологий |b Отделение материаловедения |3 (RuTPU)RU\TPU\col\23508 |
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