Improvement of Thermal Cycling Resistance of AlxSi1−xN Coatings on Cu Substrates by Optimizing Al/Si Ratio; Materials; Vol. 12, iss. 14
| Parent link: | Materials Vol. 12, iss. 14.— 2019.— [2249, 12 p.] |
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| Diğer Yazarlar: | , , , |
| Özet: | Title screen The effect of the elemental composition of AlxSi1−xN coatings deposited on Cu substrates by magnetron sputtering on their structure, mechanical properties and thermal cycling performance is studied. The coatings with Al-Si-N solid solution, two-phase (AlxSi1−xN nanocrystallites embedded in the SixNy tissue phase) and amorphous structure were obtained by varying Al/Si ratio. It is shown that polycrystalline coatings with a low Si content (Al0.88Si0.12N) are characterized by the highest thermal cycling resistance. While the coatings with a high and intermediate Si content (Al0.11Si0.89N and Al0.74Si0.26N) were subjected to cracking and spallation after the first cycle of annealing at a temperature of 1000 ◦C, delamination of the Al0.88Si0.12N coating was observed after 25 annealing cycles. The Al0.88Si0.12N coating also exhibited the best barrier performance against copper diffusion from the substrate. The effect of thermal stresses on the diffusion barrier performance of the coatings against copper diffusion is discussed. |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
2019
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| Konular: | |
| Online Erişim: | http://earchive.tpu.ru/handle/11683/57276 https://doi.org/10.3390/ma12142249 |
| Materyal Türü: | Elektronik Kitap Bölümü |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=660974 |
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| 200 | 1 | |a Improvement of Thermal Cycling Resistance of AlxSi1−xN Coatings on Cu Substrates by Optimizing Al/Si Ratio |f A. V. Panin [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 53 tit.] | ||
| 330 | |a The effect of the elemental composition of AlxSi1−xN coatings deposited on Cu substrates by magnetron sputtering on their structure, mechanical properties and thermal cycling performance is studied. The coatings with Al-Si-N solid solution, two-phase (AlxSi1−xN nanocrystallites embedded in the SixNy tissue phase) and amorphous structure were obtained by varying Al/Si ratio. It is shown that polycrystalline coatings with a low Si content (Al0.88Si0.12N) are characterized by the highest thermal cycling resistance. While the coatings with a high and intermediate Si content (Al0.11Si0.89N and Al0.74Si0.26N) were subjected to cracking and spallation after the first cycle of annealing at a temperature of 1000 ◦C, delamination of the Al0.88Si0.12N coating was observed after 25 annealing cycles. The Al0.88Si0.12N coating also exhibited the best barrier performance against copper diffusion from the substrate. The effect of thermal stresses on the diffusion barrier performance of the coatings against copper diffusion is discussed. | ||
| 461 | |t Materials | ||
| 463 | |t Vol. 12, iss. 14 |v [2249, 12 p.] |d 2019 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a copper | |
| 610 | 1 | |a magnetron sputtering | |
| 610 | 1 | |a thermal cycling performance | |
| 610 | 1 | |a scanning electron microscopy | |
| 610 | 1 | |a cracking | |
| 610 | 1 | |a медь | |
| 610 | 1 | |a магнетронные покрытия | |
| 701 | 1 | |a Panin |b A. V. |c physicist |c Professor of Tomsk Polytechnic University, doctor of physical and mathematical Sciences |f 1971- |g Alexey Viktorovich |3 (RuTPU)RU\TPU\pers\34630 |9 17992 | |
| 701 | 1 | |a Shugurov |b A. R. |c Specialist in the field of material science |c Professor of Tomsk Polytechnic University, Doctor of Physical and Mathematical Sciences |f 1967- |g Artur Rubinovich |y Tomsk |9 22641 | |
| 701 | 1 | |a Kazachenok |b M. S. |g Marina Sergeevna | |
| 701 | 1 | |a Sergeev |b V. P. |c specialist in the field of materials science |c Professor of Tomsk Polytechnic University, doctor of technical Sciences |f 1949- |g Viktor Petrovich |9 16615 | |
| 801 | 2 | |a RU |b 63413507 |c 20200110 |g RCR | |
| 856 | 4 | |u http://earchive.tpu.ru/handle/11683/57276 |z http://earchive.tpu.ru/handle/11683/57276 | |
| 856 | 4 | |u https://doi.org/10.3390/ma12142249 |z https://doi.org/10.3390/ma12142249 | |
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