Structure and Phase Composition of Multilayer AlN/SiN Films Irradiated with Helium Ions; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 12, iss. 6
| Parent link: | Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques Vol. 12, iss. 6.— 2018.— [P. 1165-1169] |
|---|---|
| Tác giả của công ty: | |
| Tác giả khác: | , , , , |
| Tóm tắt: | Title screen The results of investigating the microstructure and phase composition of AlN/SiNx multilayer films with alternating nanocrystalline aluminum nitride (nc-AlN) and amorphous silicon nitride (a-SiNx) phases, which were formed via magnetron sputtering, are presented. The layer thickness varies from 2 to 10 nm, the total film thickness is 300 nm, and the grain size of the AlN phase corresponds to the nc-AlN layer thickness. By means of transmission electron microscopy, it is revealed that, due to 30-keV He+ ion irradiation with a dose of 5 Ч 1016 cm–2, gas pores with an average size of 2.0–2.4 nm and localized mainly in a-SiNx layers are generated within the projective range of helium ions. The appearance of such inclusions is due to the fact that implanted helium atoms migrate into the formed vacancy complexes. In this case, the structural state of AlN crystal layers remains unchanged. Режим доступа: по договору с организацией-держателем ресурса |
| Ngôn ngữ: | Tiếng Anh |
| Được phát hành: |
2018
|
| Những chủ đề: | |
| Truy cập trực tuyến: | https://doi.org/10.1134/S1027451018050695 |
| Định dạng: | Điện tử Chương của sách |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=660893 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 660893 | ||
| 005 | 20250408162705.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\31014 | ||
| 090 | |a 660893 | ||
| 100 | |a 20191106d2018 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Structure and Phase Composition of Multilayer AlN/SiN Films Irradiated with Helium Ions |f V. V. Uglov [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 14 tit.] | ||
| 330 | |a The results of investigating the microstructure and phase composition of AlN/SiNx multilayer films with alternating nanocrystalline aluminum nitride (nc-AlN) and amorphous silicon nitride (a-SiNx) phases, which were formed via magnetron sputtering, are presented. The layer thickness varies from 2 to 10 nm, the total film thickness is 300 nm, and the grain size of the AlN phase corresponds to the nc-AlN layer thickness. By means of transmission electron microscopy, it is revealed that, due to 30-keV He+ ion irradiation with a dose of 5 Ч 1016 cm–2, gas pores with an average size of 2.0–2.4 nm and localized mainly in a-SiNx layers are generated within the projective range of helium ions. The appearance of such inclusions is due to the fact that implanted helium atoms migrate into the formed vacancy complexes. In this case, the structural state of AlN crystal layers remains unchanged. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | ||
| 463 | |t Vol. 12, iss. 6 |v [P. 1165-1169] |d 2018 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a multilayer films | |
| 610 | 1 | |a silicon nitride | |
| 610 | 1 | |a aluminum nitride | |
| 610 | 1 | |a helium-ion implantation | |
| 610 | 1 | |a amorphous layers | |
| 610 | 1 | |a pore formation | |
| 610 | 1 | |a многослойные пленки | |
| 610 | 1 | |a нитрид кремния | |
| 610 | 1 | |a нитрид алюминия | |
| 701 | 1 | |a Uglov |b V. V. |c Physicist |c Leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1954- |g Vladimir Vasilievich |3 (RuTPU)RU\TPU\pers\36737 | |
| 701 | 1 | |a Shimanskii |b V. I. |c Physicist |c Associate Scientist of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1986- |g Vitali Igorevich |3 (RuTPU)RU\TPU\pers\36738 | |
| 701 | 1 | |a Korenevsky |b E. L. |g Egor Leonidovich | |
| 701 | 1 | |a Remnev |b G. E. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Gennady Efimovich |3 (RuTPU)RU\TPU\pers\31500 | |
| 701 | 1 | |a Kvasov |b N. T. |c physicist |c leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1949- |g Nikolay Trafimovich |3 (RuTPU)RU\TPU\pers\36768 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа физики высокоэнергетических процессов |c (2017- ) |3 (RuTPU)RU\TPU\col\23551 |
| 801 | 2 | |a RU |b 63413507 |c 20191106 |g RCR | |
| 856 | 4 | |u https://doi.org/10.1134/S1027451018050695 | |
| 942 | |c CF | ||