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| LEADER |
00000nla2a2200000 4500 |
| 001 |
660866 |
| 005 |
20240215150555.0 |
| 035 |
|
|
|a (RuTPU)RU\TPU\network\30956
|
| 035 |
|
|
|a RU\TPU\network\30955
|
| 090 |
|
|
|a 660866
|
| 100 |
|
|
|a 20191101a2019 k y0engy50 ba
|
| 101 |
0 |
|
|a eng
|
| 102 |
|
|
|a RU
|
| 105 |
|
|
|a y z 100zy
|
| 135 |
|
|
|a drgn ---uucaa
|
| 181 |
|
0 |
|a i
|
| 182 |
|
0 |
|a b
|
| 200 |
1 |
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|a Surface Modification of ZrO[2] -3Y[2] O[3] Ceramics with Continuous Ar{+} Ion Beams
|f V. Kostenko [et al.]
|
| 203 |
|
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|a Text
|c electronic
|
| 225 |
1 |
|
|a Ion Beam Processing of Materials. Oral Presentation
|
| 300 |
|
|
|a Заглавие с экрана
|
| 463 |
|
0 |
|0 (RuTPU)RU\TPU\network\30793
|t Surface Modification of Materials by Ion Beams (SMMIB-2019)
|o 21st International Conference, 25-30 August 2019, Tomsk, Russia
|o abstract book
|f National Research Tomsk Polytechnic University (TPU)
|v [P. 40]
|d 2019
|
| 610 |
1 |
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|a электронный ресурс
|
| 610 |
1 |
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|a труды учёных ТПУ
|
| 610 |
1 |
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|a ceramics
|
| 610 |
1 |
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|a continuous ion beams
|
| 610 |
1 |
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|a argon ions
|
| 610 |
1 |
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|a hardness
|
| 610 |
1 |
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|a phase analysis
|
| 610 |
1 |
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|a керамика
|
| 610 |
1 |
|
|a ионные пучки
|
| 610 |
1 |
|
|a ионы аргона
|
| 610 |
1 |
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|a твердость
|
| 610 |
1 |
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|a фазовый анализ
|
| 610 |
1 |
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|a модификация
|
| 610 |
1 |
|
|a поверхности
|
| 701 |
|
1 |
|a Kostenko
|b V.
|c specialist in the field of electrical engineering
|c laboratory assistant researcher of Tomsk Polytechnic University
|f 1994-
|g Valeriya
|3 (RuTPU)RU\TPU\pers\42079
|
| 701 |
|
1 |
|a Gyngazov (Ghyngazov)
|b S. A.
|c specialist in the field of electronics
|c Professor of Tomsk Polytechnic University, Doctor of technical sciences
|f 1958-
|g Sergey Anatolievich
|3 (RuTPU)RU\TPU\pers\33279
|9 17024
|
| 701 |
|
1 |
|a Ovchinnikov
|b V.
|g Vladimir
|
| 701 |
|
1 |
|a Gushchina
|b N.
|g Natalya
|
| 701 |
|
1 |
|a Makhinko
|b F.
|g Fedor
|
| 712 |
0 |
2 |
|a Национальный исследовательский Томский политехнический университет
|b Институт неразрушающего контроля
|b Проблемная научно-исследовательская лаборатория электроники, диэлектриков и полупроводников
|3 (RuTPU)RU\TPU\col\19033
|
| 801 |
|
2 |
|a RU
|b 63413507
|c 20191105
|g RCR
|
| 856 |
4 |
|
|u https://smmib.ru/assets/files/SMMIB2019_TOMSK_full.pdf#page=41
|
| 942 |
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|c CF
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