Obtaining a Material Based on Я-SiC and Carbon Fibers Using an Electric Arc Technique; Inorganic Materials: Applied Research; Vol. 10, iss. 4
| Parent link: | Inorganic Materials: Applied Research Vol. 10, iss. 4.— 2019.— [P. 836-840] |
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| Corporate Authors: | , |
| Other Authors: | , , , |
| Summary: | Title screen A method is presented for obtaining a material consisting mainly of carbon fibers with a graphite-like structure (Cfib) and a cubic phase of silicon carbide Я–SiC using a DC arc plasma. The developed method of synthesis is characterized by a number of advantages, such as no protective gases required, easy implementation, and short duration of the operating cycle in the system (for several seconds). Judging by the data of scanning electron microscopy, the obtained silicon carbide crystals have a typical regular facetting and are characterized by a wide particle size distribution ranging from a size less than 1 µm to tens of microns. The silicon carbide crystals grow on the surface of carbon fibers, whereas their average size exhibits a decrease upon approaching the interface between the surface of graphite fiber and silicon carbide. Режим доступа: по договору с организацией-держателем ресурса |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | https://doi.org/10.1134/S2075113319040324 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=660668 |
| Summary: | Title screen A method is presented for obtaining a material consisting mainly of carbon fibers with a graphite-like structure (Cfib) and a cubic phase of silicon carbide Я–SiC using a DC arc plasma. The developed method of synthesis is characterized by a number of advantages, such as no protective gases required, easy implementation, and short duration of the operating cycle in the system (for several seconds). Judging by the data of scanning electron microscopy, the obtained silicon carbide crystals have a typical regular facetting and are characterized by a wide particle size distribution ranging from a size less than 1 µm to tens of microns. The silicon carbide crystals grow on the surface of carbon fibers, whereas their average size exhibits a decrease upon approaching the interface between the surface of graphite fiber and silicon carbide. Режим доступа: по договору с организацией-держателем ресурса |
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| DOI: | 10.1134/S2075113319040324 |