Cherenkov-Channeling radiation from sub-GeV relativistic electrons

Detaylı Bibliyografya
Parent link:Physics Letters B
Vol. 795.— 2019.— [P. 592-598]
Müşterek Yazar: Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов
Diğer Yazarlar: Korotchenko K. B. Konstantin Borisovich, Pivovarov Yu. L. Yuriy Leonidovich, Takabayashi Yu. Yuichi, Dabagov S. B. Sultan Barasbievich
Özet:Title screen
Quantization of transverse energy levels for planar channeled relativistic electrons together with crystal dispersion may drastically change Cherenkov radiation resulting in mixed Cherenkov-Channeling Radiation (ChCR). In this work we have developed a quantum theory of ChCR. We have shown that the main feature of ChCR is reflected by its angular distribution, which consists of narrow bands reflecting the quantization of the projectile transverse energy. Moreover, mixed ChCR is shifted compared to Cherenkov radiation to larger emission angles. To stimulate experimental investigation of predicted phenomenon, a numerical analysis is carried out for 255 MeV electrons planar channeled in C (diamond) and Si crystals.
Baskı/Yayın Bilgisi: 2019
Konular:
Online Erişim:https://doi.org/10.1016/j.physletb.2019.06.063
Materyal Türü: Elektronik Kitap Bölümü
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=660567
Diğer Bilgiler
Özet:Title screen
Quantization of transverse energy levels for planar channeled relativistic electrons together with crystal dispersion may drastically change Cherenkov radiation resulting in mixed Cherenkov-Channeling Radiation (ChCR). In this work we have developed a quantum theory of ChCR. We have shown that the main feature of ChCR is reflected by its angular distribution, which consists of narrow bands reflecting the quantization of the projectile transverse energy. Moreover, mixed ChCR is shifted compared to Cherenkov radiation to larger emission angles. To stimulate experimental investigation of predicted phenomenon, a numerical analysis is carried out for 255 MeV electrons planar channeled in C (diamond) and Si crystals.
DOI:10.1016/j.physletb.2019.06.063