High-power laser-patterning graphene oxide: A new approach to making arbitrarily-shaped self-aligned electrodes; Carbon; Vol. 151

Bibliographic Details
Parent link:Carbon
Vol. 151.— 2019.— [Р. 148-155]
Corporate Authors: Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов, Национальный исследовательский Томский политехнический университет Исследовательская школа химических и биомедицинских технологий (ИШХБМТ), Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Отделение материаловедения
Other Authors: Rodriguez (Rodriges) Contreras R. D. Raul David, Murastov G. V. Gennadiy Viktorovich, Lipovka A. A. Anna Anatolyevna, Fatkullin M. I. Maksim Ilgizovich, Nozdrina O. V. Olga Vladimirovna, Pavlov S. K. Sergey Konstantinovich, Postnikov P. S. Pavel Sergeevich, Chehimi M. M. Mohamed Mehdi, Chen Jinju, Sheremet E. S. Evgeniya Sergeevna
Summary:Title screen
We demonstrate the fabrication of self-aligned laser-reduced graphene oxide patterns with a spatial resolution/laser spot size ratio of 1/10, lower than anything reported before using laser-reduction. Laser light modifies graphene oxide (GO) by removing the oxygen-containing groups turning GO into a more graphene-like nanomaterial. Our method is based on high laser power density used for the reduction of GO that results in ablation of the GO film. This enabled us to remove the laser spot illuminated area while inducing the selective graphene oxide reduction at the periphery of the laser spot achieving resistivity of 1.6·10?5???m, as low as values previously reported for other rGO. Therefore, we can exploit laser-induced reduction at high laser power density to pattern GO films with conductive dimensions that are a fraction of the laser spot size. This innovative method is scalable, inexpensive, and straightforward, allowing conductive circuits on arbitrary, flexible, and transparent substrates for applications in lightweight electronics and wearables.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2019
Subjects:
Online Access:https://doi.org/10.1016/j.carbon.2019.05.049
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=660464

MARC

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200 1 |a High-power laser-patterning graphene oxide: A new approach to making arbitrarily-shaped self-aligned electrodes  |f R. D. Rodriguez (Rodriges) Contreras, G. V. Murastov, A. A. Lipovka [et al.] 
203 |a Text  |c electronic 
300 |a Title screen 
320 |a [References: 40 tit.] 
330 |a We demonstrate the fabrication of self-aligned laser-reduced graphene oxide patterns with a spatial resolution/laser spot size ratio of 1/10, lower than anything reported before using laser-reduction. Laser light modifies graphene oxide (GO) by removing the oxygen-containing groups turning GO into a more graphene-like nanomaterial. Our method is based on high laser power density used for the reduction of GO that results in ablation of the GO film. This enabled us to remove the laser spot illuminated area while inducing the selective graphene oxide reduction at the periphery of the laser spot achieving resistivity of 1.6·10?5???m, as low as values previously reported for other rGO. Therefore, we can exploit laser-induced reduction at high laser power density to pattern GO films with conductive dimensions that are a fraction of the laser spot size. This innovative method is scalable, inexpensive, and straightforward, allowing conductive circuits on arbitrary, flexible, and transparent substrates for applications in lightweight electronics and wearables. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Carbon 
463 |t Vol. 151  |v [Р. 148-155]  |d 2019 
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701 1 |a Rodriguez (Rodriges) Contreras  |b R. D.  |c Venezuelan physicist, doctor of science  |c Professor of Tomsk Polytechnic University  |f 1982-  |g Raul David  |3 (RuTPU)RU\TPU\pers\39942  |9 21179 
701 1 |a Murastov  |b G. V.  |c Specialist in the field of lightning engineering  |c Assistant of the Department of Tomsk Polytechnic University  |f 1989-  |g Gennadiy Viktorovich  |3 (RuTPU)RU\TPU\pers\37695  |9 20489 
701 1 |a Lipovka  |b A. A.  |c chemist  |c Associate Scientist of Tomsk Polytechnic University  |f 1993-  |g Anna Anatolyevna  |3 (RuTPU)RU\TPU\pers\44078  |9 21753 
701 1 |a Fatkullin  |b M. I.  |c chemical engineer  |c Engineer of Tomsk Polytechnic University  |f 1997-  |g Maksim Ilgizovich  |3 (RuTPU)RU\TPU\pers\47264  |9 22844 
701 1 |a Nozdrina  |b O. V.  |c specialist in the field of lightning engineering  |c engineer of Tomsk Polytechnic University  |f 1990-  |g Olga Vladimirovna  |3 (RuTPU)RU\TPU\pers\44784  |9 21846 
701 1 |a Pavlov  |b S. K.  |c physicist  |c Engineer of Tomsk Polytechnic University  |f 1990-  |g Sergey Konstantinovich  |3 (RuTPU)RU\TPU\pers\32875  |9 16723 
701 1 |a Postnikov  |b P. S.  |c organic chemist  |c Associate Professor of Tomsk Polytechnic University, Candidate of chemical sciences  |f 1984-  |g Pavel Sergeevich  |3 (RuTPU)RU\TPU\pers\31287  |9 15465 
701 1 |a Chehimi  |b M. M.  |g Mohamed Mehdi 
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701 1 |a Sheremet  |b E. S.  |c physicist  |c Professor of Tomsk Polytechnic University  |f 1988-  |g Evgeniya Sergeevna  |3 (RuTPU)RU\TPU\pers\40027  |9 21197 
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