Raman Spectroscopy Investigation of Laser-Irradiated Single-Walled Carbon Nanotube Films; Physica Status Solidi (B); Vol. 256, iss. 2

التفاصيل البيبلوغرافية
Parent link:Physica Status Solidi (B)
Vol. 256, iss. 2.— 2019.— [1800412, 5 p.]
المؤلف الرئيسي: Rodriguez (Rodriges) Contreras R. D. Raul David
مؤلفون مشاركون: Национальный исследовательский Томский политехнический университет Исследовательская школа химических и биомедицинских технологий (ИШХБМТ), Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов
مؤلفون آخرون: Ma Bing, Sheremet E. S. Evgeniya Sergeevna
الملخص:Title screen
Raman spectroscopy (RS) is the tool of choice for the analysis of carbon nanomaterials. In graphene and carbon nanotubes (CNT), RS provides rich information such as defect concentration, CNT chirality, graphene layer number, doping, strain, and other physical parameters of interest. This work presents the RS investigation of a semiconducting CNT film after high power laser irradiation. Changes were observed in the D band revealing the change in the defect concentration induced by the laser. More importantly, it was found the relative intensity decrease of G? and some radial breathing modes which suggests that the effects of laser irradiation induce diameter?selective effects in CNTs. The spectroscopic changes to the selective electronic structure modification for some semiconducting CNTs were attributed as due to those CNTs getting closer to resonance conditions with the fixed laser excitation.
اللغة:الإنجليزية
منشور في: 2019
الموضوعات:
الوصول للمادة أونلاين:https://doi.org/10.1002/pssb.201800412
التنسيق: الكتروني فصل الكتاب
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=659974
الوصف
الملخص:Title screen
Raman spectroscopy (RS) is the tool of choice for the analysis of carbon nanomaterials. In graphene and carbon nanotubes (CNT), RS provides rich information such as defect concentration, CNT chirality, graphene layer number, doping, strain, and other physical parameters of interest. This work presents the RS investigation of a semiconducting CNT film after high power laser irradiation. Changes were observed in the D band revealing the change in the defect concentration induced by the laser. More importantly, it was found the relative intensity decrease of G? and some radial breathing modes which suggests that the effects of laser irradiation induce diameter?selective effects in CNTs. The spectroscopic changes to the selective electronic structure modification for some semiconducting CNTs were attributed as due to those CNTs getting closer to resonance conditions with the fixed laser excitation.
DOI:10.1002/pssb.201800412