Effect of short-pulsed ion irradiation on the optical and electrical properties of pyrolytic boron nitride; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 447
| Parent link: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.— , 1998- Vol. 447.— 2019.— [Р. 1-7] |
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| Collectivité auteur: | |
| Autres auteurs: | , , , , |
| Résumé: | Title screen The effect of irradiation by carbon ions in the mode of short-pulsed ion implantation on the optical and electrical characteristics of graphite-like pyrolytic boron nitride was studied. The characteristics of the states of growth defects localized in the band gap change more significantly with an increase in the energy density of the ion beam, which is accompanied by the ordering of the electronic structure of the compound due to radiation – thermal annealing. Absorption spectra indicate the predominant effect of static disorder due to defects. Irradiation forms a defective semiconductor material with a maximum band gap of 3.3–3.45eV, a current value of 2.65–2.83?eV for direct transitions and 1.1–1.8eV for indirect transitions, and an absorption edge due to exponentially distributed states of 1.3–2.6eV and 2.6–3.3eV defects of different nature. Anion vacancies, their clusters and impurity-vacancy complexes make the main contribution to the material properties. Irradiation forms low – conducting dielectric layers with surface conductivity of mixed n– and p–type on the surface of a pyrolytic boron nitride. The conduction mechanism is determined by the activation exchange of charge carriers between the allowed bands and donor and acceptor levels due to radiation and growth defects. After irradiation, the Fermi level remains localized near the position characteristic of the pyrolytic boron nitride near the middle of the band gap. Режим доступа: по договору с организацией-держателем ресурса |
| Langue: | anglais |
| Publié: |
2019
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| Sujets: | |
| Accès en ligne: | https://doi.org/10.1016/j.nimb.2019.03.033 |
| Format: | Électronique Chapitre de livre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=659962 |
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| 200 | 1 | |a Effect of short-pulsed ion irradiation on the optical and electrical properties of pyrolytic boron nitride |f F. V. Konusov, A. V. Kabyshev, S. K. Pavlov [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 17 tit.] | ||
| 330 | |a The effect of irradiation by carbon ions in the mode of short-pulsed ion implantation on the optical and electrical characteristics of graphite-like pyrolytic boron nitride was studied. The characteristics of the states of growth defects localized in the band gap change more significantly with an increase in the energy density of the ion beam, which is accompanied by the ordering of the electronic structure of the compound due to radiation – thermal annealing. Absorption spectra indicate the predominant effect of static disorder due to defects. Irradiation forms a defective semiconductor material with a maximum band gap of 3.3–3.45eV, a current value of 2.65–2.83?eV for direct transitions and 1.1–1.8eV for indirect transitions, and an absorption edge due to exponentially distributed states of 1.3–2.6eV and 2.6–3.3eV defects of different nature. Anion vacancies, their clusters and impurity-vacancy complexes make the main contribution to the material properties. Irradiation forms low – conducting dielectric layers with surface conductivity of mixed n– and p–type on the surface of a pyrolytic boron nitride. The conduction mechanism is determined by the activation exchange of charge carriers between the allowed bands and donor and acceptor levels due to radiation and growth defects. After irradiation, the Fermi level remains localized near the position characteristic of the pyrolytic boron nitride near the middle of the band gap. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |d 1998- | ||
| 463 | |t Vol. 447 |v [Р. 1-7] |d 2019 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a boron nitride | |
| 610 | 1 | |a localized states | |
| 610 | 1 | |a radiation defects | |
| 610 | 1 | |a bandgap | |
| 610 | 1 | |a absorption | |
| 610 | 1 | |a нитрид бора | |
| 610 | 1 | |a радиационные дефекты | |
| 610 | 1 | |a зазоры | |
| 610 | 1 | |a поглощения | |
| 701 | 1 | |a Konusov |b F. V. |c physicist |c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1958- |g Fedor Valerievich |3 (RuTPU)RU\TPU\pers\32570 |9 16491 | |
| 701 | 1 | |a Kabyshev |b A. V. |c specialist in the field of electric power engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1958- |g Alexander Vasilievich |3 (RuTPU)RU\TPU\pers\32572 | |
| 701 | 1 | |a Pavlov |b S. K. |c physicist |c Engineer of Tomsk Polytechnic University |f 1990- |g Sergey Konstantinovich |3 (RuTPU)RU\TPU\pers\32875 | |
| 701 | 1 | |a Tarbokov |b V. A. |c specialist in the field of material science |c Leading engineer of Tomsk Polytechnic University, Candidate of technical sciences |f 1969- |g Vladislav Aleksandrovich |3 (RuTPU)RU\TPU\pers\41878 | |
| 701 | 1 | |a Remnev |b G. E. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Gennady Efimovich |3 (RuTPU)RU\TPU\pers\31500 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа физики высокоэнергетических процессов |c (2017- ) |3 (RuTPU)RU\TPU\col\23551 |
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