First high-resolution analysis of the fundamental bands of 29SiD4 and 30SiD4: Line positions and strengths

Bibliographische Detailangaben
Parent link:Journal of Quantitative Spectroscopy and Radiative Transfer
Vol. 225.— 2019.— [P. 122-155]
Körperschaft: Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов
Weitere Verfasser: Sydow C. Christian, Gromova O. V. Olga Vasilievna, Bekhtereva E. S. Elena Sergeevna, Raspopova N. I. Natalya Ivanovna, Belova A. S. Anastasiya Sergeevna, Bauerekker Z. Zigurd, Ulenekov (Ulenikov) O. N. Oleg Nikolaevich
Zusammenfassung:Title screen
The high resolution infrared spectra of MSiD4 (M=29,30) in natural abundance of MSi (92.23% of 28Si, 4.68% of 29Si, and 3.09% of 30Si) were measured with Bruker IFS120 and IFS125 HR Fourier transform infrared spectrometers at an optical resolution between 0.00096 and 0.0025 cm−1 and analyzed in the regions of 550-800 cm−1 and 1480-1700 cm−1 where the four fundamental bands, ν2, ν4, ν1 and ν3are located. The 840/1641/888 transitions with Jmax. = 31/31/35 and 638/1356/838 transitions with Jmax. = 31/31/34 were assigned to the ν2, ν4, and ν3 bands of 29SiD4and 30SiD4. The subsequent weighted fit of experimentally assigned transitions was made with the Hamiltonian model which takes the resonance interactions between pairs of vibrational states (0010, F2)/(1000, A1) and (0001, F2)/(0100, E) into account. As a result, sets of 22 and 22 fitted parameters were obtained which reproduces the initial 3369 and 2832 ro-vibrational transitions of the 29SiD4 and 30SiD4isotopologues with the drms=2.34×10−4 cm−1 and 2.67×10−4 cm−1, respectively. An analysis of 221 and 134 experimental ro-vibrational lines of the ν4/ν2 and ν3bands of 29SiD4 and 30SiD4 was performed using the Hartmann-Tran profile to simulate the measured line shape and to determine experimental line intensities. A detailed line list of transitions of 29SiD4 and 30SiD4 in the studied regions is generated.
Режим доступа: по договору с организацией-держателем ресурса
Sprache:Englisch
Veröffentlicht: 2019
Schlagworte:
Online-Zugang:https://doi.org/10.1016/j.jqsrt.2018.12.026
Format: Elektronisch Buchkapitel
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=659723

MARC

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200 1 |a First high-resolution analysis of the fundamental bands of 29SiD4 and 30SiD4: Line positions and strengths  |f C. Sydow [et al.] 
203 |a Text  |c electronic 
300 |a Title screen 
320 |a [References: 76 tit.] 
330 |a The high resolution infrared spectra of MSiD4 (M=29,30) in natural abundance of MSi (92.23% of 28Si, 4.68% of 29Si, and 3.09% of 30Si) were measured with Bruker IFS120 and IFS125 HR Fourier transform infrared spectrometers at an optical resolution between 0.00096 and 0.0025 cm−1 and analyzed in the regions of 550-800 cm−1 and 1480-1700 cm−1 where the four fundamental bands, ν2, ν4, ν1 and ν3are located. The 840/1641/888 transitions with Jmax. = 31/31/35 and 638/1356/838 transitions with Jmax. = 31/31/34 were assigned to the ν2, ν4, and ν3 bands of 29SiD4and 30SiD4. The subsequent weighted fit of experimentally assigned transitions was made with the Hamiltonian model which takes the resonance interactions between pairs of vibrational states (0010, F2)/(1000, A1) and (0001, F2)/(0100, E) into account. As a result, sets of 22 and 22 fitted parameters were obtained which reproduces the initial 3369 and 2832 ro-vibrational transitions of the 29SiD4 and 30SiD4isotopologues with the drms=2.34×10−4 cm−1 and 2.67×10−4 cm−1, respectively. An analysis of 221 and 134 experimental ro-vibrational lines of the ν4/ν2 and ν3bands of 29SiD4 and 30SiD4 was performed using the Hartmann-Tran profile to simulate the measured line shape and to determine experimental line intensities. A detailed line list of transitions of 29SiD4 and 30SiD4 in the studied regions is generated. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Journal of Quantitative Spectroscopy and Radiative Transfer 
463 |t Vol. 225  |v [P. 122-155]  |d 2019 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a v2, v4, and v3 bands of 29SiD4 and 30SiD4 
610 1 |a line positions and line strengths 
610 1 |a energies and spectroscopic parameters 
610 1 |a спектроскопические параметры 
701 1 |a Sydow  |b C.  |g Christian 
701 1 |a Gromova  |b O. V.  |c physicist  |c Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences  |f 1982-  |g Olga Vasilievna  |3 (RuTPU)RU\TPU\pers\34333  |9 17839 
701 1 |a Bekhtereva  |b E. S.  |c physicist  |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences  |f 1974-  |g Elena Sergeevna  |3 (RuTPU)RU\TPU\pers\34450  |9 17851 
701 1 |a Raspopova  |b N. I.  |c physicist  |c Associate Professor of Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences  |f 1990-  |g Natalya Ivanovna  |3 (RuTPU)RU\TPU\pers\34080  |9 17636 
701 1 |a Belova  |b A. S.  |c physicist  |c technician Tomsk Polytechnic University  |f 1993-  |g Anastasiya Sergeevna  |3 (RuTPU)RU\TPU\pers\35993 
701 1 |a Bauerekker  |b Z.  |g Zigurd 
701 1 |a Ulenekov (Ulenikov)  |b O. N.  |c physicist  |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences  |f 1949-  |g Oleg Nikolaevich  |3 (RuTPU)RU\TPU\pers\34331  |9 17837 
712 0 2 |a Национальный исследовательский Томский политехнический университет  |b Исследовательская школа физики высокоэнергетических процессов  |c (2017- )  |3 (RuTPU)RU\TPU\col\23551 
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