Multilevel Hierarchical Structure Formed in the Film (Ti)/Substrate (SiC-Ceramics) System under Irradiation by an Intense Pulsed Electron Beam

Bibliografische gegevens
Parent link:AIP Conference Proceedings
Vol. 2051 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2018 (AMHS’18).— 2018.— [020110, 4 p.]
Coauteurs: Национальный исследовательский Томский политехнический университет Исследовательская школа химических и биомедицинских технологий Научно-исследовательский центр "Физическое материаловедение и композитные материалы", Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Отделение материаловедения, Национальный исследовательский Томский политехнический университет Инженерная школа энергетики Организационный отдел, Национальный исследовательский Томский политехнический университет
Andere auteurs: Ivanov Yu. F. Yuriy Fedorovich, Shugurov V. Vladimir, Kalashnikov M. P. Mark Petrovich, Leonov A. A. Andrey Andreevich, Teresov A. Anton, Petyukevich M. S. Mariya Stanislavovna, Polisadova V. V. Valentina Valentinovna
Samenvatting:Title screen
The aim of this study was the formation of multilevel hierarchical structure in the SiC ceramics surface layer as a result melting of the film (Ti)/substrate (SiC-ceramics) system by an intense pulsed electron beam. SiC ceramics samples obtained by SPS-sintering were used. Titanium film of 0.5 [mu]m was formed by vacuum electric-arc plasmaassisted spraying of cathode from VT1-0 technical-grade titanium. Irradiation of the film/substrate system was carried out with an intense pulsed electron beam of submillisecond duration with the following parameters: accelerated electron energy 17 keV, electron beam energy density 15 J/cm{2} , pulse duration 200 [mu]s, quantity of pulses 30, and residual gas (argon) pressure in the working chamber 0.03 Pa. As a result of completed studies formation of multilevel multiphase submicro-nanocrystalline hierarchical structure with microhardness in the range from 35 to 96 GPa was found, repeatedly.
Режим доступа: по договору с организацией-держателем ресурса
Gepubliceerd in: 2018
Onderwerpen:
Online toegang:https://doi.org/10.1063/1.5083353
Formaat: Elektronisch Hoofdstuk
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=659176
Omschrijving
Samenvatting:Title screen
The aim of this study was the formation of multilevel hierarchical structure in the SiC ceramics surface layer as a result melting of the film (Ti)/substrate (SiC-ceramics) system by an intense pulsed electron beam. SiC ceramics samples obtained by SPS-sintering were used. Titanium film of 0.5 [mu]m was formed by vacuum electric-arc plasmaassisted spraying of cathode from VT1-0 technical-grade titanium. Irradiation of the film/substrate system was carried out with an intense pulsed electron beam of submillisecond duration with the following parameters: accelerated electron energy 17 keV, electron beam energy density 15 J/cm{2} , pulse duration 200 [mu]s, quantity of pulses 30, and residual gas (argon) pressure in the working chamber 0.03 Pa. As a result of completed studies formation of multilevel multiphase submicro-nanocrystalline hierarchical structure with microhardness in the range from 35 to 96 GPa was found, repeatedly.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1063/1.5083353