Properties of Nanocomposite Nickel-Carbon Films Deposited by Magnetron Sputtering; Russian Physics Journal; Vol. 60, iss. 8
| Parent link: | Russian Physics Journal Vol. 60, iss. 8.— 2018.— [P. 1029-1033] |
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| Erakunde egilea: | |
| Beste egile batzuk: | , , , , , , , , |
| Gaia: | Title screen The method of magnetron sputtering was used to produce a-C and a-C:Ni films on substrates of monocrystalline silicon and thermoelectric material of n-type ((Bi2Te3)0.94(Bi2Se3)0.06) and p-type ((Bi2Te3)0.20(Sb2Te3)0.80) conductivity. The authors studied the effect of Ni concentration on specific electric resistance, hardness and adhesion of the produced films. It was demonstrated that specific resistance of a-C films deposited by graphite target sputtering when supplying high bias voltage onto the substrate can be reduced by increasing the share of graphitized carbon. Adding Ni to such films allows additionally reducing their specific resistance. The increase in Ni content is accompanied with the decrease in hardness and adhesion of a-C:Ni films. The acquired values of specific electric resistance and adhesion of a-C:Ni films to thermoelectric materials allow using them as barrier anti-diffusion coatings of thermoelectric modules. Режим доступа: по договору с организацией-держателем ресурса |
| Hizkuntza: | ingelesa |
| Argitaratua: |
2018
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| Gaiak: | |
| Sarrera elektronikoa: | https://doi.org/10.1007/s11182-017-1209-1 |
| Formatua: | Baliabide elektronikoa Liburu kapitulua |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=659068 |
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| 200 | 1 | |a Properties of Nanocomposite Nickel-Carbon Films Deposited by Magnetron Sputtering |f A. S. Grenaderov [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 21 tit.] | ||
| 330 | |a The method of magnetron sputtering was used to produce a-C and a-C:Ni films on substrates of monocrystalline silicon and thermoelectric material of n-type ((Bi2Te3)0.94(Bi2Se3)0.06) and p-type ((Bi2Te3)0.20(Sb2Te3)0.80) conductivity. The authors studied the effect of Ni concentration on specific electric resistance, hardness and adhesion of the produced films. It was demonstrated that specific resistance of a-C films deposited by graphite target sputtering when supplying high bias voltage onto the substrate can be reduced by increasing the share of graphitized carbon. Adding Ni to such films allows additionally reducing their specific resistance. The increase in Ni content is accompanied with the decrease in hardness and adhesion of a-C:Ni films. The acquired values of specific electric resistance and adhesion of a-C:Ni films to thermoelectric materials allow using them as barrier anti-diffusion coatings of thermoelectric modules. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 1 | |t Russian Physics Journal | |
| 463 | 1 | |t Vol. 60, iss. 8 |v [P. 1029-1033] |d 2018 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a amorphous carbon films | |
| 610 | 1 | |a thermoelectric converters | |
| 610 | 1 | |a anti-diffusion layer | |
| 610 | 1 | |a conductivity | |
| 610 | 1 | |a hardness | |
| 610 | 1 | |a adhesion | |
| 610 | 1 | |a пленки | |
| 610 | 1 | |a аморфный углерод | |
| 610 | 1 | |a термоэлектрические преобразователи | |
| 610 | 1 | |a проводимость | |
| 610 | 1 | |a твердость | |
| 610 | 1 | |a адгезия | |
| 701 | 1 | |a Grenaderov |b A. S. |g Aleksandr Sergeevich | |
| 701 | 1 | |a Oskomov |b K. V. |g Konstantin Vladimirovich | |
| 701 | 1 | |a Soloviev |b A. A. |c specialist in the field of hydrogen energy |c Associate Professor of Tomsk Polytechnic University, Candidate of technical sciences |f 1977- |g Andrey Aleksandrovich |3 (RuTPU)RU\TPU\pers\30863 | |
| 701 | 1 | |a Rabotkin |b S. V. |g Sergey Viktorovich | |
| 701 | 1 | |a Zakharov |b A. N. |g Aleksandr Nikolaevich | |
| 701 | 1 | |a Semyonov |b V. A. |g Vladimir Aleksandrovich | |
| 701 | 1 | |a Oskirko |b V. O. |g Vladimir Olegovich | |
| 701 | 1 | |a Elgin |b Y. I. |g Yury Igorevich | |
| 701 | 1 | |a Korneva |b O. S. |c physicist |c engineer of Tomsk Polytechnic University |f 1988- |g Olga Sergeevna |3 (RuTPU)RU\TPU\pers\37178 |9 20156 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа ядерных технологий |b Научная лаборатория высокоинтенсивной имплантации ионов |3 (RuTPU)RU\TPU\col\23698 |
| 801 | 2 | |a RU |b 63413507 |c 20191125 |g RCR | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/s11182-017-1209-1 |
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