Structural Changes in a Single GaN Nanowire under Applied Voltage Bias

Structural Changes in a Single GaN Nanowire under Applied Voltage Bias

Бібліографічні деталі
Parent link:Nano Letters.— , 2001-
Vol. 18, iss. 9.— 2018.— [P. 5446–5452]
Співавтор: Национальный исследовательский Томский политехнический университет (ТПУ) Институт неразрушающего контроля (ИНК) Международная научно-образовательная лаборатория неразрушающего контроля (МНОЛ НК)
Інші автори: Lazarev S. V. Sergey Vladimirovich, Dzhigaev D. Dmitry, Bi Zh. Zhaoxia, Nowzari A. Ali, Kim A. Young Yong, Rose M. Max
Резюме:Title screen
GaN nanowires (NWs) are promising building blocks for future optoelectronic devices and nanoelectronics. They exhibit stronger piezoelectric properties than bulk GaN. This phenomena may be crucial for applications of NWs and makes their study highly important. We report on an investigation of the structure evolution of a single GaN NW under an applied voltage bias along polar [0001] crystallographic direction until its mechanical break. The structural changes were investigated using coherent X-ray Bragg diffraction. The three-dimensional (3D) intensity distributions of the NWs without metal contacts, with contacts, and under applied voltage bias in opposite polar directions were analyzed. Coherent X-ray Bragg diffraction revealed the presence of significant bending of the NWs already after metal contacts deposition, which was increased at applied voltage bias. Employing analytical simulations based on elasticity theory and a finite element method (FEM) approach, we developed a 3D model of the NW bending under applied voltage. From this model and our experimental data, we determined the piezoelectric constant of the GaN NW to be about 7.7 pm/V in [0001] crystallographic direction. The ultimate tensile strength of the GaN NW was obtained to be about 1.22 GPa. Our work demonstrates the power of in operando X-ray structural studies of single NWs for their effective design and implementation with desired functional properties.
Режим доступа: по договору с организацией-держателем ресурса
Опубліковано: 2018
Предмети:
электронный ресурс
труды учёных ТПУ
coherent X-ray Bragg diffraction
finite element method
GaN nanowires
piezoelectric effect
Онлайн доступ:https://doi.org/10.1021/acs.nanolett.8b01802
Формат: Електронний ресурс Частина з книги
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=659002

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