Deposition of Cr films by hot target magnetron sputtering on biased substrates
| Parent link: | Surface and Coatings Technology Vol. 350.— 2018.— [P. 560-568] |
|---|---|
| Müşterek Yazar: | |
| Diğer Yazarlar: | , , , , , , , |
| Özet: | Title screen The Cr films were deposited by hot target magnetron sputtering on grounded and biased substrates. The deposition modes with low and high deposition rates (different by 4 times) were selected. The sublimation of hot Cr target decreased the re-sputtering effect of the growing films under ion bombardment and reduced the losses of deposition rate from 28.7 to 13.4% (for −40 V bias and 1.9 kW discharge power). The calculations of energy flux densityon the substrate revealed that the major contribution has a target radiation (56.2…85.5%) and kinetic energy of deposited particles and ions (4.8…34.3%) become a significant only with substrate biasing. The XRD measurements showed cubic structured (110) Cr films with compressive stresses (0.48…0.90 GPa), which is non-dependent from bias voltage for high-rate deposition modes. The Cr films mainly had a columnar structure and columnar width increased from 50 to 450 nm with rise of discharge power (W). The substrate biasing and high deposition rate resulted in the formation of irregular microstructure of the Cr films along their thickness from porous to columnar state. The indentation tests showed the strong dependence of film hardness and toughness (H/E) from W and different behavior of the mechanical properties of the Cr films for the deposition on biased substrates with low and high deposition rates. AM_Agreement |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
2018
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| Konular: | |
| Online Erişim: | https://doi.org/10.1016/j.surfcoat.2018.07.047 |
| Materyal Türü: | Elektronik Kitap Bölümü |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658948 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 658948 | ||
| 005 | 20250820110909.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\27208 | ||
| 090 | |a 658948 | ||
| 100 | |a 20181218d2018 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Deposition of Cr films by hot target magnetron sputtering on biased substrates |f D. V. Sidelev [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 49 tit.] | ||
| 330 | |a The Cr films were deposited by hot target magnetron sputtering on grounded and biased substrates. The deposition modes with low and high deposition rates (different by 4 times) were selected. The sublimation of hot Cr target decreased the re-sputtering effect of the growing films under ion bombardment and reduced the losses of deposition rate from 28.7 to 13.4% (for −40 V bias and 1.9 kW discharge power). The calculations of energy flux densityon the substrate revealed that the major contribution has a target radiation (56.2…85.5%) and kinetic energy of deposited particles and ions (4.8…34.3%) become a significant only with substrate biasing. The XRD measurements showed cubic structured (110) Cr films with compressive stresses (0.48…0.90 GPa), which is non-dependent from bias voltage for high-rate deposition modes. The Cr films mainly had a columnar structure and columnar width increased from 50 to 450 nm with rise of discharge power (W). The substrate biasing and high deposition rate resulted in the formation of irregular microstructure of the Cr films along their thickness from porous to columnar state. The indentation tests showed the strong dependence of film hardness and toughness (H/E) from W and different behavior of the mechanical properties of the Cr films for the deposition on biased substrates with low and high deposition rates. | ||
| 371 | 0 | |a AM_Agreement | |
| 461 | 1 | |t Surface and Coatings Technology | |
| 463 | 1 | |t Vol. 350 |v [P. 560-568] |d 2018 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a hot target sputtering | |
| 610 | 1 | |a Cr film | |
| 610 | 1 | |a substrate bias | |
| 610 | 1 | |a structure | |
| 610 | 1 | |a mechanical properties | |
| 610 | 1 | |a распыление | |
| 610 | 1 | |a смещения | |
| 610 | 1 | |a субстраты | |
| 610 | 1 | |a механические характеристики | |
| 701 | 1 | |a Sidelev |b D. V. |c physicist |c engineer of Tomsk Polytechnic University |f 1991- |g Dmitry Vladimirovich |3 (RuTPU)RU\TPU\pers\34524 |9 17905 | |
| 701 | 1 | |a Bestetti |b M. |c physicist |c Researcher of Tomsk Polytechnic University |f 1965- |g Massimiliano |3 (RuTPU)RU\TPU\pers\37134 |9 20127 | |
| 701 | 1 | |a Bleykher (Bleicher) |b G. A. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of Physical and Mathematical Sciences |f 1961- |g Galina Alekseevna |3 (RuTPU)RU\TPU\pers\31496 |9 15657 | |
| 701 | 1 | |a Krivobokov |b V. P. |c Russian physicist |c professor of Tomsk Polytechnic University (TPU), Doctor of Physical and Mathematical Sciences (DSc) |f 1948- |g Valery Pavlovich |3 (RuTPU)RU\TPU\pers\30416 |9 14757 | |
| 701 | 1 | |a Grudinin |b V. A. |c physicist |c engineer of Tomsk Polytechnic University |f 1995- |g Vladislav Alekseevich |3 (RuTPU)RU\TPU\pers\42519 |9 21548 | |
| 701 | 1 | |a Franz |b S. |g Silvia | |
| 701 | 1 | |a Vicenzo |b A. |g Antonello | |
| 701 | 1 | |a Shanenkova |b Yu. L. |c specialist in the field of electric power engineering |c Associate Professor of Tomsk Polytechnic University, Candidate of Technical Sciences |f 1991- |g Yuliya Leonidovna |3 (RuTPU)RU\TPU\pers\34119 |9 17659 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа ядерных технологий |b Научно-образовательный центр Б. П. Вейнберга |3 (RuTPU)RU\TPU\col\23561 |9 28358 |
| 801 | 2 | |a RU |b 63413507 |c 20181218 |g RCR | |
| 856 | 4 | |u https://doi.org/10.1016/j.surfcoat.2018.07.047 | |
| 942 | |c CF | ||