Main principles of developing exploitation models of semiconductor devices

Main principles of developing exploitation models of semiconductor devices

מידע ביבליוגרפי
Parent link:IOP Conference Series: Materials Science and Engineering
Vol. 363 : Cognitive Robotics.— 2018.— [012025, 6 p.]
מחבר ראשי: Gradoboev A. V. Aleksandr Vasilyevich
מחבר תאגידי: Национальный исследовательский Томский политехнический университет Инженерная школа неразрушающего контроля и безопасности Отделение контроля и диагностики
מחברים אחרים: Simonova A. V. Anastasia Vladimirovna
סיכום:Title screen
The paper represents primary tasks, solutions of which allow to develop the exploitation modes of semiconductor devices taking into account complex and combined influence of ionizing irradiation and operation factors. The structure of the exploitation model of the semiconductor device is presented, which is based on radiation and reliability models. Furthermore, it was shown that the exploitation model should take into account complex and combine influence of various ionizing irradiation types and operation factors. The algorithm of developing the exploitation model of the semiconductor devices is proposed. The possibility of creating the radiation model of Schottky barrier diode, Schottky field-effect transistor and Gunn diode is shown based on the available experimental data. The basic exploitation model of IRLEDs based upon double AlGaAs heterostructures is represented. The practical application of the exploitation models will allow to output the electronic products with guaranteed operational properties.
יצא לאור: 2018
נושאים:
электронный ресурс
труды учёных ТПУ
эксплуатация
полупроводниковые приборы
ионизирующее облучение
надежность
эксплуатационные свойства
диоды Шоттки
диоды Ганна
транзисторы Шоттки
גישה מקוונת:https://doi.org/10.1088/1757-899X/363/1/012025
http://earchive.tpu.ru/handle/11683/51787
פורמט: אלקטרוני Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658787

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