Main principles of developing exploitation models of semiconductor devices
| Parent link: | IOP Conference Series: Materials Science and Engineering Vol. 363 : Cognitive Robotics.— 2018.— [012025, 6 p.] |
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| Autore principale: | |
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| Riassunto: | Title screen The paper represents primary tasks, solutions of which allow to develop the exploitation modes of semiconductor devices taking into account complex and combined influence of ionizing irradiation and operation factors. The structure of the exploitation model of the semiconductor device is presented, which is based on radiation and reliability models. Furthermore, it was shown that the exploitation model should take into account complex and combine influence of various ionizing irradiation types and operation factors. The algorithm of developing the exploitation model of the semiconductor devices is proposed. The possibility of creating the radiation model of Schottky barrier diode, Schottky field-effect transistor and Gunn diode is shown based on the available experimental data. The basic exploitation model of IRLEDs based upon double AlGaAs heterostructures is represented. The practical application of the exploitation models will allow to output the electronic products with guaranteed operational properties. |
| Lingua: | inglese |
| Pubblicazione: |
2018
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| Accesso online: | https://doi.org/10.1088/1757-899X/363/1/012025 http://earchive.tpu.ru/handle/11683/51787 |
| Natura: | Elettronico Capitolo di libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658787 |
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| 200 | 1 | |a Main principles of developing exploitation models of semiconductor devices |f A. V. Gradoboev, A. V. Simonova | |
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| 330 | |a The paper represents primary tasks, solutions of which allow to develop the exploitation modes of semiconductor devices taking into account complex and combined influence of ionizing irradiation and operation factors. The structure of the exploitation model of the semiconductor device is presented, which is based on radiation and reliability models. Furthermore, it was shown that the exploitation model should take into account complex and combine influence of various ionizing irradiation types and operation factors. The algorithm of developing the exploitation model of the semiconductor devices is proposed. The possibility of creating the radiation model of Schottky barrier diode, Schottky field-effect transistor and Gunn diode is shown based on the available experimental data. The basic exploitation model of IRLEDs based upon double AlGaAs heterostructures is represented. The practical application of the exploitation models will allow to output the electronic products with guaranteed operational properties. | ||
| 461 | 1 | |0 (RuTPU)RU\TPU\network\2008 |t IOP Conference Series: Materials Science and Engineering | |
| 463 | 1 | |0 (RuTPU)RU\TPU\network\26822 |t Vol. 363 : Cognitive Robotics |o II International Conference, 22–25 November 2017, Tomsk, Russian Federation |o [proceedings] |v [012025, 6 p.] |d 2018 | |
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| 610 | 1 | |a диоды Шоттки | |
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| 700 | 1 | |a Gradoboev |b A. V. |c physicist |c Professor of Yurga technological Institute of Tomsk Polytechnic University, Doctor of technical sciences |f 1952- |g Aleksandr Vasilyevich |2 stltpush |3 (RuTPU)RU\TPU\pers\34242 |9 17773 | |
| 701 | 1 | |a Simonova |b A. V. |c Physicist |c Assistant of the Department of Tomsk Polytechnic University |f 1990- |g Anastasia Vladimirovna |2 stltpush |3 (RuTPU)RU\TPU\pers\42263 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Инженерная школа неразрушающего контроля и безопасности |b Отделение контроля и диагностики |h 7978 |2 stltpush |3 (RuTPU)RU\TPU\col\23584 |
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