Tunneling current in w-GaN/AlN(0001) structures with deep-level defects

Tunneling current in w-GaN/AlN(0001) structures with deep-level defects

Detalhes bibliográficos
Parent link:Superlattices and Microstructures: Scientific Journal
Vol. 122.— 2018.— [P. 624-630]
Autor principal: Razzhuvalov A. N. Alexander Nikolaevich
Autor Corporativo: Национальный исследовательский Томский политехнический университет Исследовательская школа физики высокоэнергетических процессов
Outros Autores: Grinyaev S. N. Sergey Nikolaevich
Resumo:Title screen
The influence of the interface deep-level defects on the tunneling current of a double-barrier w-AlN/GaN (0001) structure is studied. It is shown that the peculiarities of the current essentially depend on the positions of deep-levels, concentrations and spatial distribution of defects. At high concentrations of defects comparable to those of polarization charge, partial compensation of polarization charges near the contacts of the structure occurs and a resonance level in the triangular well can arise. Defective structures can possess a huge peak-to-valley ratio higher than 100 due to the small value of the valley current. The results of the simulations are consistent with some experimental dependences of the tunneling current in double-barrier structures.
Режим доступа: по договору с организацией-держателем ресурса
Publicado em: 2018
Assuntos:
электронный ресурс
труды учёных ТПУ
нитриды
туннелирование
дефекты
Acesso em linha:https://doi.org/10.1016/j.spmi.2018.06.034
Formato: Recurso Electrónico Capítulo de Livro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658685

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