Tunneling current in w-GaN/AlN(0001) structures with deep-level defects
| Parent link: | Superlattices and Microstructures: Scientific Journal Vol. 122.— 2018.— [P. 624-630] |
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| Summary: | Title screen The influence of the interface deep-level defects on the tunneling current of a double-barrier w-AlN/GaN (0001) structure is studied. It is shown that the peculiarities of the current essentially depend on the positions of deep-levels, concentrations and spatial distribution of defects. At high concentrations of defects comparable to those of polarization charge, partial compensation of polarization charges near the contacts of the structure occurs and a resonance level in the triangular well can arise. Defective structures can possess a huge peak-to-valley ratio higher than 100 due to the small value of the valley current. The results of the simulations are consistent with some experimental dependences of the tunneling current in double-barrier structures. Режим доступа: по договору с организацией-держателем ресурса |
| Sprog: | engelsk |
| Udgivet: |
2018
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| Fag: | |
| Online adgang: | https://doi.org/10.1016/j.spmi.2018.06.034 |
| Format: | Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658685 |
MARC
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| 200 | 1 | |a Tunneling current in w-GaN/AlN(0001) structures with deep-level defects |f A. N. Razzhuvalov, S. N. Grinyaev | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 630 (24 tit.)] | ||
| 330 | |a The influence of the interface deep-level defects on the tunneling current of a double-barrier w-AlN/GaN (0001) structure is studied. It is shown that the peculiarities of the current essentially depend on the positions of deep-levels, concentrations and spatial distribution of defects. At high concentrations of defects comparable to those of polarization charge, partial compensation of polarization charges near the contacts of the structure occurs and a resonance level in the triangular well can arise. Defective structures can possess a huge peak-to-valley ratio higher than 100 due to the small value of the valley current. The results of the simulations are consistent with some experimental dependences of the tunneling current in double-barrier structures. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 1 | |t Superlattices and Microstructures |o Scientific Journal | |
| 463 | 1 | |t Vol. 122 |v [P. 624-630] |d 2018 | |
| 610 | 1 | |a электронный ресурс | |
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| 700 | 1 | |a Razzhuvalov |b A. N. |c physicist |c associate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences |f 1976- |g Alexander Nikolaevich |3 (RuTPU)RU\TPU\pers\36680 |9 19719 | |
| 701 | 1 | |a Grinyaev |b S. N. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical science |f 1951- |g Sergey Nikolaevich |3 (RuTPU)RU\TPU\pers\32574 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет |b Исследовательская школа физики высокоэнергетических процессов |c (2017- ) |3 (RuTPU)RU\TPU\col\23551 |
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