Razzhuvalov A. N. Alexander Nikolaevich & Grinyaev S. N. Sergey Nikolaevich. (2018). Tunneling current in w-GaN/AlN(0001) structures with deep-level defects. 2018. https://doi.org/10.1016/j.spmi.2018.06.034
Chicago Style (17th ed.) CitationRazzhuvalov A. N. Alexander Nikolaevich and Grinyaev S. N. Sergey Nikolaevich. Tunneling Current in W-GaN/AlN(0001) Structures with Deep-level Defects. 2018, 2018. https://doi.org/10.1016/j.spmi.2018.06.034.
MLA (9th ed.) CitationRazzhuvalov A. N. Alexander Nikolaevich and Grinyaev S. N. Sergey Nikolaevich. Tunneling Current in W-GaN/AlN(0001) Structures with Deep-level Defects. 2018, 2018. https://doi.org/10.1016/j.spmi.2018.06.034.
Warning: These citations may not always be 100% accurate.