Photoluminescence of LiF Crystals Doped with Oxygen-Containing Impurities; Key Engineering Materials; Vol. 769 : High Technology: Research and Applications (HTRA 2017)

Photoluminescence of LiF Crystals Doped with Oxygen-Containing Impurities; Key Engineering Materials; Vol. 769 : High Technology: Research and Applications (HTRA 2017)

Bibliographic Details
Parent link:Key Engineering Materials: Scientific Journal
Vol. 769 : High Technology: Research and Applications (HTRA 2017).— 2018.— [141-145]
Corporate Author: Национальный исследовательский Томский политехнический университет Инженерная школа новых производственных технологий Отделение материаловедения
Other Authors: Korepanov V. I. Vladimir Ivanovich, Petikar P. V. Pavel Viktorovich, Ge Guanghui (Guang Hui Ge), Lipovka A. A. Anna Anatolyevna
Summary:Title screen
The aim of this paper is to study the photoluminescence spectra and photoluminescence excitation spectra in LiF-O, LiF-WO[3] and LiF-TiO[2] crystals at 20-300 K. It is shown that the luminescence centers in LiF-WO[3] and LiF-TiO[2] crystals are oxygen ions O{2-} disturbed by defects. Two absorption bands within 6-4.5 eV and two luminescence bands with maxima at 3.1 eV and 2.64 eV correspond to these centers. The absorption and emission spectra of the oxygen center (3.1 eV luminescence band) are close to those for the (O{2-}-V[a]) center.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2018
Subjects:
электронный ресурс
труды учёных ТПУ
Impurity
LiF Crystals
Luminescence
Oxygen Center
примеси
кристаллы
люминесценция
спектры
поглощение
Online Access:https://doi.org/10.4028/www.scientific.net/KEM.769.141
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=658639

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